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Titolo:
Formation of Si clusters in electron-irradiated SiC studied by electron energy-loss spectroscopy
Autore:
Asaoka, N; Muto, S; Tanabe, T;
Indirizzi:
Nagoya Univ, Ctr Integrated Res Sci & Engn, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 Engn, Nagoya, Aichi 4648603, Japan Nagoya Univ, Grad Sch Engn, Dept Nucl Engn, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 Engn, Nagoya, Aichi 4648603, Japan
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 3-7, volume: 10, anno: 2001,
pagine: 1251 - 1254
SICI:
0925-9635(200103/07)10:3-7<1251:FOSCIE>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Soggetto:
TO-AMORPHOUS TRANSITION; INDUCED AMORPHIZATION; INDUCED CRYSTALLINE; SINGLE-CRYSTALS;
Keywords:
electron microscopy; electron energy-loss spectroscopy; electron irradiation damage; SiC;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Muto, S Nagoya Univ, Ctr Integrated Res Sci & Engn, Nagoya, Aichi 4648603,Japan Nagoya Univ Nagoya Aichi Japan 4648603 goya, Aichi 4648603, Japan
Citazione:
N. Asaoka et al., "Formation of Si clusters in electron-irradiated SiC studied by electron energy-loss spectroscopy", DIAM RELAT, 10(3-7), 2001, pp. 1251-1254

Abstract

Electron-irradiation damage in 6H-SiC was examined at room temperature by means of transmission electron microscopy and electron energy-loss spectroscopy (EELS). A detailed analysis of extended energy-loss fine structure (EXELFS) gave unambiguous evidence of the formation of direct Si-Si bonding after prolonged irradiation, where the sample still maintained the well-defined 6H structure, while no appreciable indication of direct C-C bonding was observed. These results suggest that C atoms should be predominantly displaced away compared to Si atoms and the residual Si atoms form small clusters. The changes in the energy-loss near-edge structure (ELNES) were consistent with the appearance of Si clusters. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/09/20 alle ore 00:26:10