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Titolo:
Characteristics of low field-emission diamond films by scanning probe microscopy (SPM)
Autore:
Zhang, L; Sakai, T; Sakuma, N; Ono, T;
Indirizzi:
Toshiba Corp, Ctr Corp Res & Dev, Saiwai Ku, Kawasaki, Kanagawa 2128582, Japan Toshiba Corp Kawasaki Kanagawa Japan 2128582 aki, Kanagawa 2128582, Japan Japan Fine Ceram Ctr, Frontier Carbon Technol Project, Kawasaki, Kanagawa,Japan Japan Fine Ceram Ctr Kawasaki Kanagawa Japan t, Kawasaki, Kanagawa,Japan
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 3-7, volume: 10, anno: 2001,
pagine: 829 - 833
SICI:
0925-9635(200103/07)10:3-7<829:COLFDF>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
AMORPHOUS-CARBON; CONDUCTIVITY;
Keywords:
diamond properties and applications; conductive scanning probe/atomic force (SPM/AFM); field emission; conductivity;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Zhang, L Toshiba Corp, Ctr Corp Res & Dev, Saiwai Ku, 1 Komukai Toshibacho, Kawasaki, Kanagawa 2128582, Japan Toshiba Corp 1 Komukai Toshibacho Kawasaki Kanagawa Japan 2128582
Citazione:
L. Zhang et al., "Characteristics of low field-emission diamond films by scanning probe microscopy (SPM)", DIAM RELAT, 10(3-7), 2001, pp. 829-833

Abstract

Field emission from the polycrystalline diamond film prepared by a two-step hot filament (HF) CVD method showed a turn-on held of 1.7 V mum(-1). To understand the low field-emission mechanism, nanoscale characteristics of both step films, the bias enhanced nucleation (BEN) film, and the subsequent poly-diamond film, were investigated by SPM. Simultaneous measurement of the topography and conductivity was carried out on both step samples. The topography image of the BEN him showed globe-shaped particles, whereas the poly-diamond him showed textured structures. Current images of both samples were found to be similar, however, which showed that highly conducting and non-conducting regions coexisted on a micro- and/or nanoscale. A comparison between the current images and the topography images revealed no obvious relationship between the morphology and the local conductivity. Further in situ I-V characteristics demonstrated that the conducting sites have an ohmic property, indicating the existence of metallic carbon phases, whereas non-conducting regions are not simply insulating, but show a characteristic of the Schottky property of a semiconductor in both samples. It is suggested that the conducting graphite channels were distributed in the semiconductor matrix on a nanoscale in both samples, despite the topography difference. Itis revealed that the field enhancement on the conducting channels plays animportant role in the low field emission. It is suggested that conductive SPM, capable of multiple operation modes, has tremendous potential for the elucidation of the microscopic properties of complex-phase materials. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/03/20 alle ore 23:04:51