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Titolo:
A study of the crystalline growth of highly boron-doped CVD diamond: preparation of graded-morphology diamond thin films
Autore:
Einaga, Y; Kim, GS; Park, SG; Fujishima, A;
Indirizzi:
Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 ppl Chem, Bunkyo Ku, Tokyo 1138656, Japan Chungbuk Natl Univ, Dept Ind Chem Engn, Hungduk Gu, Cheongju 361763, Chungbuk, South Korea Chungbuk Natl Univ Cheongju Chungbuk South Korea 361763 gbuk, South Korea
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 3-7, volume: 10, anno: 2001,
pagine: 306 - 311
SICI:
0925-9635(200103/07)10:3-7<306:ASOTCG>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SUBSTRATE TEMPERATURES; POWER-DENSITY; LOW-PRESSURE; ELECTRODES; FEATURES; REACTOR; POLYMER; ACID;
Keywords:
graded-morphology; crystalline growth; highly boron-doped diamond film;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
21
Recensione:
Indirizzi per estratti:
Indirizzo: Einaga, Y Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan UnivTokyo Tokyo Japan 1138656 Bunkyo Ku, Tokyo 1138656, Japan
Citazione:
Y. Einaga et al., "A study of the crystalline growth of highly boron-doped CVD diamond: preparation of graded-morphology diamond thin films", DIAM RELAT, 10(3-7), 2001, pp. 306-311

Abstract

An investigation was made of graded-morphology diamond thin films deposited on Si substrates by use of the microwave plasma chemical vapor deposition(CVD) technique. The preparation of graded diamond thin films not only offers new perspectives into functional materials, but it also gives clues to the growth mechanism of CVD diamond. Although it is clear that the substrate temperature and the deposition time affect the grain size in particular, the difference depending on the boron concentration in the growing process was studied in the present work. As a result, in highly boron-doped (105 ppm) diamond films, the Raman peak which was ascribed to the boron-doping wasnot observed at the very initial growth stage. However, the crystal growthprocess was almost irrelevant for the boron-doping quantity. Furthermore, we showed the morphology dependence of electrochemical properties as one example of the excellent functions of the graded-morphology highly boron-doped diamond film. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 14/08/20 alle ore 16:59:59