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Titolo:
Field emission from GaN surfaces roughened by hydrogen plasma treatment
Autore:
Sugino, T; Hori, T; Kimura, C; Yamamoto, T;
Indirizzi:
Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan Osaka Univ SuitaOsaka Japan 5650871 ct Engn, Suita, Osaka 5650871, Japan
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 21, volume: 78, anno: 2001,
pagine: 3229 - 3231
SICI:
0003-6951(20010521)78:21<3229:FEFGSR>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
NEGATIVE ELECTRON-AFFINITY; VAPOR-PHASE EPITAXY; BORON-NITRIDE FILMS; EMITTER; FABRICATION; CATHODES; ARRAYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Sugino, T Osaka Univ, Dept Elect Engn, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan Osaka Univ 2-1 Yamadaoka Suita Osaka Japan 5650871 650871, Japan
Citazione:
T. Sugino et al., "Field emission from GaN surfaces roughened by hydrogen plasma treatment", APPL PHYS L, 78(21), 2001, pp. 3229-3231

Abstract

GaN layers are grown on sapphire substrates with AlN buffer layers by the metalorganic chemical vapor deposition method. GaN layers are doped with Si. The electron density of the n-type GaN is 2x10(17) cm(-3). It is found that the GaN surface is etched with hydrogen (H-2) plasma produced by supplying microwave power leading to the formation of the roughened surface of GaN. A variation in the surface morphology occurs due to microwave power and gas pressure. Field emission measurements are carried out for GaN with various surface morphologies. It is observed that the turn-on electric field decreases with increasing surface roughness of the GaN. A turn-on electric field of the electron emission is estimated to be as low as 12.4 V/mum. (C) 2001 American Institute of Physics.

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Documento generato il 07/04/20 alle ore 04:01:26