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Titolo:
Photoinduced non-linear optical diagnostic of SiNxOy/Si < 111 > interfaces
Autore:
Kityk, IV;
Indirizzi:
Univ Maine, Fac Sci, Lab Letat Condense, Solid State Dept, F-72085 Le Mans, France Univ Maine Le Mans France F-72085 id State Dept, F-72085 Le Mans, France WSP, Inst Phys, Czestochowa, Poland WSP Czestochowa PolandWSP, Inst Phys, Czestochowa, Poland
Titolo Testata:
OPTICS AND LASERS IN ENGINEERING
fascicolo: 4, volume: 35, anno: 2001,
pagine: 239 - 250
SICI:
0143-8166(200104)35:4<239:PNODOS>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
CUBIC CENTROSYMMETRIC CRYSTALS; 3RD-HARMONIC GENERATION; PHENOMENOLOGICAL THEORY; SILICON-NITRIDE; ABSORPTION; LPCVD; FILMS;
Keywords:
optical second harmonic generation; amorphous thin films; silicon oxinitride; non-linear optical method of investigations;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Kityk, IV Univ Maine, Fac Sci, Lab Letat Condense, Solid State Dept, Ave Olivier Messiaen, F-72085 Le Mans, France Univ Maine Ave Olivier Messiaen LeMans France F-72085 , France
Citazione:
I.V. Kityk, "Photoinduced non-linear optical diagnostic of SiNxOy/Si < 111 > interfaces", OPT LASER E, 35(4), 2001, pp. 239-250

Abstract

Anisotropic (elliptically polarized) photoinduced second harmonic generation (PISHG) in SiNxOy/Si < 111 > films was proposed for contact-less monitoring of specimens with different nitrogen to oxygen (N/O) ratios. As a source for the photoinducing light, we used a nitrogen Q-switched pulse laser atwavelengths of 315, 337 and 354 nm as well as doubled frequency YAG-Nd laser wavelength (lambda = 530 nm). The YAG:Nd pulse laser (lambda = 1.06 mum;W = 30 MW: tau = 10-50 ps) was used to measure the PISHG. All measurementswere done in a reflected light regime. We found that the output PISHG signal was sensitive to the N/O ratio and the film thickness. Measurements of the PISHG versus pumping wavelengths, powers, incident angles as well as independent measurements of the DC-electric field induced second harmonic generation indicate the major role played in this process by axially symmetric photoexcited electron-phonon states. The SiNxOy films were synthesized using a technique of chemical evaporation at low pressures. Films with thickness varying between 10 and 30 nm and with an N/O ratio between 0 and 1 were obtained. Electrostatic potential distribution at the Si < 111 > -SiNxOy interfaces was calculated. Comparison of the experimentally obtained and quantum chemically calculated PISHG data are presented. High sensitivity of anisotropic PISHG to the N/O ratio and film thickness is revealed. The rule of the electron-phonon interactions in the dependencies observed is discussed. We have shown that the PISHG method has higher sensitivity than the traditional extended X-ray absorption line structure spectroscopic and linear optical method for films with the N/O ratio higher than 0.50. (C) 2001 Elsevier Science Ltd. All rights reserved.

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Documento generato il 12/07/20 alle ore 02:27:43