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Titolo:
Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source
Autore:
Song, JD; Kim, JM; Lee, YT;
Indirizzi:
Kwangju Inst Sci & Technol, Dept Informat & Commun, Puk Gu, Kwangju 500712, South Korea Kwangju Inst Sci & Technol Kwangju South Korea 500712 00712, South Korea
Titolo Testata:
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
fascicolo: 5, volume: 72, anno: 2001,
pagine: 625 - 627
SICI:
0947-8396(200105)72:5<625:GOHDIO>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHOSPHORUS SOURCE; STEP STRUCTURE; GAINP; BAND; HETEROSTRUCTURES; IN0.48GA0.52P; IN0.5GA0.5P; REDUCTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Lee, YT Kwangju Inst Sci & Technol, Dept Informat & Commun, Puk Gu, 1 Oryong Dong,Kwangju 500712, South Korea Kwangju Inst Sci & Technol 1 Oryong Dong Kwangju South Korea 500712
Citazione:
J.D. Song et al., "Growth of highly disordered InGaP on (100) GaAs by molecular beam epitaxy with a GaP decomposition source", APPL PHYS A, 72(5), 2001, pp. 625-627

Abstract

High-quality, lattice-matched InGaP on exact (100) GaAs was successfully grown by molecular beam epitaxy with a GaP decomposition source. The ordering parameter (eta) of the InGaP is investigated as a function of the growth temperature. eta is as low as 0.22 and almost insensitive to the growth temperature below 460 degreesC. It increases abruptly around 475 degreesC and has a maximum value of 0.35 at approximate to 490 degreesC. Double crystal X-ray diffraction and a low-temperature photoluminescence spectrum reveal that the present growth method is robust and provides better quality InGaP compared to other state-of-the-art growth technologies.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 06/04/20 alle ore 01:55:15