Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Fabrication and electric properties of LaCoO3 thin films by ion-beam sputtering
Autore:
Hattori, T; Matsui, T; Tsuda, H; Mabuchi, H; Morii, K;
Indirizzi:
Univ Osaka Prefecture, Grad Sch Engn, Dept Met & Mat Sci, Sakai, Osaka 5998531, Japan Univ Osaka Prefecture Sakai Osaka Japan 5998531 kai, Osaka 5998531, Japan
Titolo Testata:
THIN SOLID FILMS
fascicolo: 1-2, volume: 388, anno: 2001,
pagine: 183 - 188
SICI:
0040-6090(20010601)388:1-2<183:FAEPOL>2.0.ZU;2-1
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXYGEN STOICHIOMETRY; SPIN-STATE; TRANSITION; OXIDES;
Keywords:
annealing; electrical properties and measurements; oxides; sputtering;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Matsui, T Univ Osaka Prefecture, Grad Sch Engn, Dept Met & Mat Sci, 1-1 Gakuen Cho, Sakai, Osaka 5998531, Japan Univ Osaka Prefecture 1-1 Gakuen Cho Sakai Osaka Japan 5998531 n
Citazione:
T. Hattori et al., "Fabrication and electric properties of LaCoO3 thin films by ion-beam sputtering", THIN SOL FI, 388(1-2), 2001, pp. 183-188

Abstract

We have successfully produced LaCoO3 thin films by ion-beam sputtering andsubsequent heat treatment. The compacts of La2O3 and CoO powder mixture were used for the targets. The films were mainly composed of the LaCoO3 phase, with a very small amount of an unidentified second phase. The resistivityat room temperature for the annealed 50 at.% La sample was determined to be 51 Omega m, whereas at high temperature, the resistivity was found to be same order of that for bulk LaCoO3, that is, comparable to the resistivity for metals. The possibility of a metal-insulator transition is described. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 04:07:01