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Titolo:
Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy
Autore:
Odnoblyudov, VA; Kovsh, AR; Zhukov, AE; Maleev, NA; Semenova, ES; Ustinov, VM;
Indirizzi:
Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia Russian Acad Sci St Petersburg Russia 194021 t Petersburg 194021, Russia
Titolo Testata:
SEMICONDUCTORS
fascicolo: 5, volume: 35, anno: 2001,
pagine: 533 - 538
SICI:
1063-7826(2001)35:5<533:TAOTGO>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V-COMPOUNDS; SOLID-SOLUTIONS; HETEROSTRUCTURES; LASERS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Odnoblyudov, VA Russian Acad Sci, AF Ioffe Physicotech Inst, Politekhnicheskaya Ul 26, St Petersburg 194021, Russia Russian Acad Sci Politekhnicheskaya Ul 26 St Petersburg Russia 194021
Citazione:
V.A. Odnoblyudov et al., "Thermodynamic analysis of the growth of GaAsN ternary compounds by molecular beam epitaxy", SEMICONDUCT, 35(5), 2001, pp. 533-538

Abstract

A thermodynamic model describing the growth of GaAsN ternary solid solutions is presented. The model is able to predict the nitrogen content of GaAsNlayers in relation to external parameters (flow rate of molecular nitrogen, arsenic flux, growth rate, and substrate temperature). The proposed modelaccounts for experimental observations such as the leveling-off dependenceof the composition on the rate of the external flow of nitrogen, the existence of a plateau in the temperature dependence of the composition, and luminescence peak broadening with respect to the ideal case. (C) 2001 MAIK "Nauka/Interperiodica".

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Documento generato il 23/09/20 alle ore 06:02:42