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Titolo:
Energy dependence of quantum dot formation by ion sputtering - art. no. 165329
Autore:
Facsko, S; Kurz, H; Dekorsy, T;
Indirizzi:
Rhein Westfal TH Aachen, Inst Semicond Elect, D-52056 Aachen, Germany Rhein Westfal TH Aachen Aachen Germany D-52056 , D-52056 Aachen, Germany Forschungszentrum Rossendorf EV, Inst Ionenstrahlphys & Mat Forsch, D-01314 Dresden, Germany Forschungszentrum Rossendorf EV Dresden Germany D-01314 Dresden, Germany
Titolo Testata:
PHYSICAL REVIEW B
fascicolo: 16, volume: 6316, anno: 2001,
pagine: 5329 -
SICI:
0163-1829(20010415)6316:16<5329:EDOQDF>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; RIPPLE TOPOGRAPHY; BOMBARDED SI(001); SURFACE; EVOLUTION; MORPHOLOGY; EROSION; SCALE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
27
Recensione:
Indirizzi per estratti:
Indirizzo: Facsko, S Rhein Westfal TH Aachen, Inst Semicond Elect, Sommerfeldstr 24, D-52056 Aachen, Germany Rhein Westfal TH Aachen Sommerfeldstr 24 Aachen Germany D-52056
Citazione:
S. Facsko et al., "Energy dependence of quantum dot formation by ion sputtering - art. no. 165329", PHYS REV B, 6316(16), 2001, pp. 5329

Abstract

Ordered quantum dot patterns are generated on GaSb and InSb surfaces due to a surface instability induced by Ar+-ion sputtering at normal incidence. The characteristic length of the generated patterns scales with the square root of the ion energy over the energy range of 75-1800 eV. This energy dependence is compared to the solutions of the isotropic Kuramoto-Sivashinshy equation and allows the determination of the lateral width of the energy distribution deposited by the incident ions in the very-low-energy range. We show that the observed energy dependence is in agreement with the linear continuum theory under the assumption that the dominant smoothing process is due to effective ion-induced diffusion without mass transport on the surface.

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Documento generato il 27/11/20 alle ore 02:26:19