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Titolo:
Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys
Autore:
Ellis, CJ; Mair, RM; Li, J; Lin, JY; Jiang, HX; Zavada, JM; Wilson, RG;
Indirizzi:
Kansas State Univ, Dept Phys, Manhattan, KS 66506 USA Kansas State Univ Manhattan KS USA 66506 pt Phys, Manhattan, KS 66506 USA US ARL European Res Off, London NW1 5TH, England US ARL European Res Off London England NW1 5TH , London NW1 5TH, England
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 1-3, volume: 81, anno: 2001,
pagine: 167 - 170
SICI:
0921-5107(20010424)81:1-3<167:OPOPIG>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
LIGHT-EMITTING-DIODES; III-V-NITRIDE; PHOTOLUMINESCENCE; SEMICONDUCTORS; LUMINESCENCE; ERBIUM; BLUE; ELECTROLUMINESCENCE; PROSPECTS; PROGRESS;
Keywords:
AlGaN alloys; praseodymium; ion implantation; photoluminescence;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, HX Kansas State Univ, Dept Phys, Cardwell Hall, Manhattan, KS 66506USA Kansas State Univ Cardwell Hall Manhattan KS USA 66506 66506 USA
Citazione:
C.J. Ellis et al., "Optical properties of Pr implanted GaN epilayers and AlxGa1-xN alloys", MAT SCI E B, 81(1-3), 2001, pp. 167-170

Abstract

It has been shown recently that III-V nitrides serve as a good host for rare earth elements and have many potential applications in optical communications. Most work in rare earth implanted III-nitride materials so far has been focused on GaN, while AlGaN alloys should have advantages over GaN due to wider energy band gap. In this work, photoluminescence (PL) spectroscopywas used to investigate praseodymium (Pr) related transitions in Pr-implanted GaN and AlxGa1-xN (0.15 < x < 0.33). The GaN epilayers and AlxGa1-xN alloys were rapid thermally annealed in nitrogen ambient to facilitate recovery from implantation related damage. We observed narrow PL emission bands near 526, 650, 950, 1100 and 1300 nm. The dependence of PL emission including line width, peak position and emission intensity on sample temperature, excitation intensity, aluminum concentration and annealing conditions were systematically studied. We found that PL intensity increases with annealing time and temperature. In contrast to GaN epilayers, different behaviors have been observed in the AlGaN host alloys. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 19/09/20 alle ore 21:17:48