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Titolo:
Uniformly and selectively doped silicon : erbium structures produced by the sublimation MBE method
Autore:
Stepikhova, M; Andreev, B; Krasilnik, Z; Soldatkin, A; Kuznetsov, V; Gusev, O;
Indirizzi:
Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia Russian Acad Sci Nizhnii Novgorod Russia 603600 Novgorod 603600, Russia Nizhnii Novgorod State Univ, Nizhnii Novgorod 603600, Russia Nizhnii Novgorod State Univ Nizhnii Novgorod Russia 603600 03600, Russia RAS, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia RAS St Petersburg Russia 194021 otech Inst, St Petersburg 194021, Russia
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 1-3, volume: 81, anno: 2001,
pagine: 67 - 70
SICI:
0921-5107(20010424)81:1-3<67:UASDS:>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
LAYERS; SI;
Keywords:
sublimation MBE; erbium; photoluminescence; Er centers;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Stepikhova, M Russian Acad Sci, Inst Phys Microstruct, GSP-105, Nizhnii Novgorod 603600,Russia Russian Acad Sci GSP-105 Nizhnii Novgorod Russia 603600 sia
Citazione:
M. Stepikhova et al., "Uniformly and selectively doped silicon : erbium structures produced by the sublimation MBE method", MAT SCI E B, 81(1-3), 2001, pp. 67-70

Abstract

Si:Er structures produced by an original sublimation MBE method demonstrate intense Er-related luminescence at 1.54 mum both 'as grown' and after annealing procedure. In this contribution we discuss the peculiarities of formation of optically active Er centers in these materials and their transformation behavior depending on the growth and annealing conditions. The photoluminescence features of uniformly Er-doped layers and of the specific selectively doped structures consisting of many periods of Si and Si:Er layers with the thicknesses down to 20 Angstrom are described. A remarkable high luminescence efficiency of the selectively doped multi-layer structures as compared to the uniformly doped is pointed out. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 08/04/20 alle ore 23:43:22