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Titolo:
Near-field scanning optical microscopy studies of electronic and photonic materials and devices
Autore:
Hsu, JWP;
Indirizzi:
Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA Bell Labs Murray Hill NJ USA 07974 ent Technol, Murray Hill, NJ 07974 USA
Titolo Testata:
MATERIALS SCIENCE & ENGINEERING R-REPORTS
fascicolo: 1, volume: 33, anno: 2001,
pagine: 1 - 50
SICI:
0927-796X(20010501)33:1<1:NSOMSO>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
SURFACE-EMITTING LASERS; ATOMIC-FORCE MICROSCOPE; BOUNDARY JOSEPHSON-JUNCTIONS; LOCAL PROPAGATION PROPERTIES; ENHANCED RAMAN-SPECTROSCOPY; SEMICONDUCTOR QUANTUM DOTS; CHARGE-COLLECTION IMAGES; SAMPLE DISTANCE CONTROL; INTERNAL SPATIAL MODES; MOLECULAR-BEAM EPITAXY;
Keywords:
near-field scanning optical microscopy; defect electronic properties; strain; semiconductors; perovskite oxides; photonic materials and devices;
Tipo documento:
Review
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
232
Recensione:
Indirizzi per estratti:
Indirizzo: Hsu, JWP Bell Labs, Lucent Technol, 600-700 Mt Ave,1-D-368, Murray Hill, NJ 07974 USA Bell Labs 600-700 Mt Ave,1-D-368 Murray Hill NJ USA 07974 974 USA
Citazione:
J.W.P. Hsu, "Near-field scanning optical microscopy studies of electronic and photonic materials and devices", MAT SCI E R, 33(1), 2001, pp. 1-50

Abstract

Probing optical properties of materials and optical characterization of crystallographic defects at the nanometer scale have been inaccessible until recently due to the diffraction limit of light. With the invention of near-field scanning optical microscopy (NSOM), resolution at the 50-100 nm levelusing visible or near infrared light is now practical. In addition to describing the NSOM technique, this review focuses on the application of NSOM to the characterization of electronic and photonic materials and devices, with particular emphasis on defects. The unique capability of NSOM to simultaneously measure surface topography and local optoelectronic properties, thereby eliminating the need to perform cross correlation analysis on results obtained using different techniques, is particularly useful in this area. Several examples are discussed. By performing near-field photocurrent (NPC) measurements, NSOM is used to probe electrical activities associated with individual threading dislocations and dislocation networks in strain relaxed, compositionally graded GeSi films. The non-destructive nature of NSOM helps elucidate how microstructural defects in the SrTiO3 bicrystal substratesaffect YBa2Cu3O7 film growth and GBJJ performance. Characterization of III-V and II-VI semiconductors, guantum dots grown by strain epitaxy, laser diodes, waveguides, and photonic crystals is also included. The advantages and disadvantages of NSOM in each application will be outlined. Throughout the review, emphasis is placed on how NSOM complements existing materials characterization techniques, as well as how quantitative results can be obtained from NSOM measurements. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 01:13:22