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Titolo:
Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system
Autore:
Azuma, Y; Usami, N; Ujihara, T; Sazaki, G; Murakami, Y; Miyashita, S; Fujiwara, K; Nakajima, K;
Indirizzi:
Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan Tohoku Univ Sendai Miyagi Japan 9808577 Ku, Sendai, Miyagi 9808577, Japan Toyama Med & Pharmaceut Univ, Toyama 9300194, Japan Toyama Med & Pharmaceut Univ Toyama Japan 9300194 Toyama 9300194, Japan
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 3-4, volume: 224, anno: 2001,
pagine: 204 - 211
SICI:
0022-0248(200104)224:3-4<204:GOSBCW>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
QUANTUM-WELL LASERS; SINGLE-CRYSTALS; LEC GROWTH; GAAS; RICH;
Keywords:
in situ monitoring; interfaces; substrates; supersaturated solutions; growth from melt; germanium silicon alloys;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Azuma, Y Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan Tohoku Univ 2-1-1 Katahira Sendai Miyagi Japan 9808577 577, Japan
Citazione:
Y. Azuma et al., "Growth of SiGe bulk crystal with uniform composition by directly controlling the growth temperature at the crystal-melt inter-face using in situ monitoring system", J CRYST GR, 224(3-4), 2001, pp. 204-211

Abstract

A SiGe bulk crystal with uniform composition was successfully fabricated by clarifying and controlling the growth parameters at the crystal-melt interface. An apparatus was developed for the direct in situ observation and precise control of the interface parameters such as the temperature and the position. The dynamical change of the growth rate of a SiGe bulk crystal in a temperature gradient can be known by utilizing the apparatus. The growingcrystal was continuously pulled down at the pulling rate balanced to the growth rate to keep the interface temperature constant, which resulted in the excellent uniformity of the grown crystal. Our technique opened the possibility to incorporate multicomponent semiconductor substrates to the semiconductor heterostructure technology. (C) 2001 Published by Elsevier Science B.V.

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Documento generato il 04/07/20 alle ore 18:33:20