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Titolo:
Rapid crystallization of silicon films using electrical-current-induced joule heating
Autore:
Sameshima, T; Andoh, N; Takahashi, H;
Indirizzi:
Tokyo Univ Agr & Technol, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Tokyo Japan 1848588 chnol, Tokyo 1848588, Japan
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 10, volume: 89, anno: 2001,
pagine: 5362 - 5367
SICI:
0021-8979(20010515)89:10<5362:RCOSFU>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
PRESSURE H2O VAPOR; POLY-SI TFTS; SURFACE PASSIVATION; THIN-FILMS; LASER; CVD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
24
Recensione:
Indirizzi per estratti:
Indirizzo: Sameshima, T Tokyo Univ Agr & Technol, 2-24-16 Nakamachi, Tokyo 1848588, Japan Tokyo Univ Agr & Technol 2-24-16 Nakamachi Tokyo Japan 1848588
Citazione:
T. Sameshima et al., "Rapid crystallization of silicon films using electrical-current-induced joule heating", J APPL PHYS, 89(10), 2001, pp. 5362-5367

Abstract

Melt-regrowth properties of 60-nm-thick silicon films were characterized in the case of electrical-current-induced joule heating. The electrical energy accumulated at a capacitance caused melting of the silicon films via joule heating with a maximum intensity at 1.5x10(6) W/cm(2). The melt-regrowthduration increased from 6 to 75 mus as the capacitance increased to 0.05-1.5 muF. Crystalline properties of the silicon films were also investigated.7 mum long crystalline grains with the (110) preferential crystalline orientation were observed using a transmission electron microscope. The tensilestress at 3.4x10(8) Pa remained in the films. The analysis of electrical conductivity resulted in a density of defect states of 3.5x10(16) cm(-3) in the films. The product of the generation efficiency, the carrier mobility and the average carrier lifetime was estimated to be similar to 10(-3) cm(2)/V. (C) 2001 American Institute of Physics.

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Documento generato il 04/12/20 alle ore 09:50:58