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Titolo:
Nature of grain boundaries in laser crystallized polycrystalline silicon thin films
Autore:
Christiansen, S; Lengsfeld, P; Krinke, J; Nerding, M; Nickel, NH; Strunk, HP;
Indirizzi:
Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Erlangen Germany D-91058 -91058 Erlangen, Germany Hahn Meitner Inst Kernforsch Berlin GmbH, D-12489 Berlin, Germany Hahn Meitner Inst Kernforsch Berlin GmbH Berlin Germany D-12489 Germany Univ Erlangen Nurnberg, Cent Facil High Resolut Electron Microscopy, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Erlangen Germany D-91058 -91058 Erlangen, Germany
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 10, volume: 89, anno: 2001,
pagine: 5348 - 5354
SICI:
0021-8979(20010515)89:10<5348:NOGBIL>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
SUPER-LATERAL GROWTH; POLY-SI TFTS; AMORPHOUS-SILICON; INTERFERENCE CRYSTALLIZATION; A-SI; TEMPERATURE; GLASS; DISLOCATIONS; TRANSISTORS; ENERGIES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
38
Recensione:
Indirizzi per estratti:
Indirizzo: Christiansen, S Univ Erlangen Nurnberg, Inst Werkstoffwissensch Mikrocharakterisierung, Cauerstr 6, D-91058 Erlangen, Germany Univ Erlangen Nurnberg Cauerstr 6 Erlangen Germany D-91058
Citazione:
S. Christiansen et al., "Nature of grain boundaries in laser crystallized polycrystalline silicon thin films", J APPL PHYS, 89(10), 2001, pp. 5348-5354

Abstract

The grain boundary populations in laser crystallized polycrystalline silicon thin films are determined by electron microscope analysis, using electron backscattering contrast in the scanning electron microscope, and convergent beam electron diffraction in the transmission electron microscope. The grain boundary populations of the grains larger than 0.5 mum are dominated by first and second order twin boundaries. This result is found to be a general feature of laser crystallization independent of the experimental details of the laser crystallization process. Texture analysis of the laser crystallized poly-Si films shows that under certain experimental conditions a {111}-preferential orientation of the grains perpendicular to the substrate can be obtained. (C) 2001 American Institute of Physics.

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Documento generato il 04/12/20 alle ore 09:43:33