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Titolo:
The loss kinetics of substitutional carbon in Si1-xCx regrown by solid phase epitaxy
Autore:
Kim, YJ; Kim, TJ; Kim, TK; Park, B; Song, JH;
Indirizzi:
Seoul Natl Univ, Sch Mat Sci & Engn, Seoul, South Korea Seoul Natl Univ Seoul South Korea ch Mat Sci & Engn, Seoul, South Korea Korea Inst Sci & Technol, Seoul 130650, South Korea Korea Inst Sci & Technol Seoul South Korea 130650 ul 130650, South Korea
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2A, volume: 40, anno: 2001,
pagine: 773 - 776
SICI:
0021-4922(200102)40:2A<773:TLKOSC>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
HETEROJUNCTION BIPOLAR-TRANSISTORS; SIGEC ALLOYS; SILICON; SI; HETEROSTRUCTURES; GROWTH; OPTOELECTRONICS; IMPLANTATION; LAYERS;
Keywords:
Si1-xCx; SPE; substitutional carbon; activation energy; loss kinetics;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, YJ Seoul Natl Univ, Sch Mat Sci & Engn, Seoul, South Korea Seoul NatlUniv Seoul South Korea ci & Engn, Seoul, South Korea
Citazione:
Y.J. Kim et al., "The loss kinetics of substitutional carbon in Si1-xCx regrown by solid phase epitaxy", JPN J A P 1, 40(2A), 2001, pp. 773-776

Abstract

Epitaxial layers of Si1-xCx (x = 0.016) were synthesized using ion implantation and solid phase epitaxy (SPE), and the loss kinetics of substitutional carbon was investigated. As annealing temperature and time increase, morecarbon atoms were found to diffuse from substitutional to interstitial sites. The activation energy for the loss of substitutional carbon into interstitial sites was obtained over the temperature range, 700-1040 degreesC, using both high-resolution X-ray diffraction (HR-XRD) and Fourier transform infrared spectroscopy (FTIR). Both methods yielded similar activation energies (similar to3 eV) for the loss kinetics. In addition, SPE layers regrown by rapid thermal annealing (RTA) were shown to have better crystalline quality than those regrown by furnace annealing.

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Documento generato il 31/03/20 alle ore 22:25:33