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Titolo:
Stress in pulsed-laser-crystallized silicon films
Autore:
Higashi, S; Ando, N; Kamisako, K; Sameshima, T;
Indirizzi:
Seiko Epson Corp, Base Technol Res Ctr, Nagano 3928502, Japan Seiko Epson Corp Nagano Japan 3928502 nol Res Ctr, Nagano 3928502, Japan Tokyo Univ Agr & Technol, Dept Engn, Koganei, Tokyo 1848588, Japan Tokyo Univ Agr & Technol Koganei Tokyo Japan 1848588 Tokyo 1848588, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2A, volume: 40, anno: 2001,
pagine: 731 - 735
SICI:
0021-4922(200102)40:2A<731:SIPSF>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
RAMAN-SCATTERING; SI; TFTS;
Keywords:
polycrystalline silicon; thin-film transistors; laser crystallization; stress; Raman scattering;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Higashi, S Seiko Epson Corp, Base Technol Res Ctr, 3-3-5 Owa, Nagano 3928502, Japan Seiko Epson Corp 3-3-5 Owa Nagano Japan 3928502 3928502, Japan
Citazione:
S. Higashi et al., "Stress in pulsed-laser-crystallized silicon films", JPN J A P 1, 40(2A), 2001, pp. 731-735

Abstract

Stress in pulsed-laser-crystallized silicon films was investigated using high-resolution Raman scattering measurements. Film stress was evaluated based on the peak shift of transverse optical (TO) phonon of crystalline silicon in Raman scattering spectra. The tensile stress in laser-crystallized 50-nm-thick silicon films on glass substrates increased from 3.5 x 10(8) Pa to 9.7 x 10(8) Pa as the him deposition temperature increased from 200 degreesC to 480 degreesC. The peak shift of laser-crystallized microcrystalline silicon (muc-Si) films revealed that the tensile stress introduced by laserirradiation was 2.3 x 10(8) Pa at most. These results indicate that the strong tensile stress is introduced by the silicon film deposition rather than by the pulsed-laser crystallization. Also, the authors demonstrate that pulsed-laser crystallization maintains the existing stress at the growth initiation sites in the bottom region of silicon films.

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Documento generato il 30/11/20 alle ore 23:49:03