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Titolo:
Study on behavior of electron irradiation defects and impurities of Czochralski silicon with annealing by positron annihilation
Autore:
Tamano, A; Hori, F; Oshima, R; Hisamatsu, T;
Indirizzi:
Univ Osaka Prefecture, Res Inst Adv Sci & Technol, Sakai, Osaka 5998570, Japan Univ Osaka Prefecture Sakai Osaka Japan 5998570 kai, Osaka 5998570, Japan Natl Space Dev Agcy Japan, Tsukuba, Ibaraki 3058505, Japan Natl Space Dev Agcy Japan Tsukuba Ibaraki Japan 3058505 ki 3058505, Japan
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2A, volume: 40, anno: 2001,
pagine: 452 - 456
SICI:
0021-4922(200102)40:2A<452:SOBOEI>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXYGEN; SI; VACANCIES;
Keywords:
Czochralski silicon (CZ-Si); positron lifetime; electron irradiation; vacancy; defect; interstitial oxygen; anneal;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
22
Recensione:
Indirizzi per estratti:
Indirizzo: Tamano, A Univ Osaka Prefecture, Res Inst Adv Sci & Technol, Sakai, Osaka 5998570, Japan Univ Osaka Prefecture Sakai Osaka Japan 5998570 5998570, Japan
Citazione:
A. Tamano et al., "Study on behavior of electron irradiation defects and impurities of Czochralski silicon with annealing by positron annihilation", JPN J A P 1, 40(2A), 2001, pp. 452-456

Abstract

Positron annihilation lifetime experiments have been performed for B-dopedp-type Czochralski silicon (CZ-SI) wafers irradiated at 300 K with 1 MeV electrons with fluences between 10(14) and 10(17) e/cm(2). In order to examine the thermal behavior of defects having shorter lifetime than that of thebulk, isochronal annealing experiments were carried out from 300 K to 900 K. The measurements were performed at 100 K to improve the positron trapping rates for defects. It is found that components having longer lifetime than that of the bulk behave differently, and they comprise by thermal donors (TD):md divacancies (V-2). The short-lifetime component observed in the present experiments is responsible for a complex defect with impure interstitial oxygen atoms, doped B atoms and vacancies. The short-lifetime defects change into vacancy-type defects and thermal donors in certain ranges of annealing temperatures.

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Documento generato il 31/03/20 alle ore 10:18:35