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Titolo:
A novel two-step laser crystallization technique for low-temperature poly-Si TFTs
Autore:
Zeng, XB; Xu, ZY; Sin, JKO; Dai, YB; Wang, CG;
Indirizzi:
Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Hong Kong Hong Kong Peoples R China R China Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China Huazhong Univ Sci & Technol Wuhan Peoples R China 430074 Peoples R China
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 5, volume: 48, anno: 2001,
pagine: 1008 - 1010
SICI:
0018-9383(200105)48:5<1008:ANTLCT>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
THIN-FILM TRANSISTORS; SOLID-PHASE CRYSTALLIZATION; EXCIMER-LASER; HYDROGENATION; FABRICATION; GROWTH; GATE;
Keywords:
laser crystallization; low temperature poly-Si; thin film transistors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Zeng, XB Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Hong Kong,Hong Kong, Peoples R China Hong Kong Univ Sci & Technol Hong Kong Hong Kong Peoples R China
Citazione:
X.B. Zeng et al., "A novel two-step laser crystallization technique for low-temperature poly-Si TFTs", IEEE DEVICE, 48(5), 2001, pp. 1008-1010

Abstract

We present investigations on a novel technique for preparing low-temperature poly-Si thin-film on glass substrate using two-step laser crystallization. In the first step, seeds are created by excimer laser induced crystallization of very thin (M nm) amorphous silicon (a-Si) thin-film deposited by plasma enhanced chemical vapor deposition (PECVD), A second (a-Si) thin-filmof 80-120 nm is used to obtain large crystalline grains grown around the seed crystallites during the second laser crystallization. Using this two-step crystallization (TSC) approach, we fabricated poly-Si thin-film transistors (TFTs) with electron mobility of 103 cm(2)/V.s and ON/OFF current ratioof 10(7). They are two times and four times higher than those of the poly-Si TFTs fabricated in the same run using conventional single-step excimer laser crystallization.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 21:56:25