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Titolo:
A fritless copper conductor system for power electronic applications
Autore:
Reicher, R; Smetana, W; Schuster, JC; Adlassnig, A;
Indirizzi:
Vienna Univ Technol, Inst Ind Elect & Mat Sci, A-1040 Vienna, Austria Vienna Univ Technol Vienna Austria A-1040 at Sci, A-1040 Vienna, Austria Univ Vienna, Inst Phys Chem, A-1090 Vienna, Austria Univ Vienna Vienna Austria A-1090 Inst Phys Chem, A-1090 Vienna, Austria
Titolo Testata:
MICROELECTRONICS RELIABILITY
fascicolo: 4, volume: 41, anno: 2001,
pagine: 491 - 498
SICI:
0026-2714(200104)41:4<491:AFCCSF>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
GLASS; ALN;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Reicher, R Vienna Univ Technol, Inst Ind Elect & Mat Sci, Gusshausstr 27-29, A-1040 Vienna, Austria Vienna Univ Technol Gusshausstr 27-29 Vienna Austria A-1040 ia
Citazione:
R. Reicher et al., "A fritless copper conductor system for power electronic applications", MICROEL REL, 41(4), 2001, pp. 491-498

Abstract

Copper coated aluminium nitride (AlN) ceramic is a preferred substrate material utilized for high power, high frequency electronic applications. The use of metallized ceramic requires bonding of the metallization onto the substrate. AlN, however, is chemically inert to Cu. At present time the direct copper bonding (DCB) technology is used to manufacture such structures. In this project, for reasons of simplicity and economy and as alternative to the standard DCB-technology, the metallization on the AlN ceramic is built up by active metal brazing of a screen printable AgCuTi thick film ink. The mean advantage of this technology is, that the metal/ceramic braze compound can be processed in a conventional belt furnace at inert firing atmosphere usually available at hybrid microelectronics industry. Aspects of paste preparation ranging from the derivation of the metallic powder to the assortment of an appropriate organic screen-printing medium were investigated. The physical properties of the phases occurring at the interface between the TiCuAg metallization and AlN ceramic and their contribution to the thermal conductivity and the thermomechanical performance of themetallized substrate have been characterized theoretically as well as by experiment and compared with different commercial glass frit containing copper thick film metallization systems. (C) 2001 Elsevier Science Ltd. All rights reserved.

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Documento generato il 03/12/20 alle ore 06:06:35