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Titolo:
C and Si impurity atoms on a GaAs(001) surface
Autore:
Sawamura, A; Yao, H; Kaji, M;
Indirizzi:
Sumitomo Elect Ind Ltd, CAE Res Ctr, Seika 6190237, Japan Sumitomo Elect Ind Ltd Seika Japan 6190237 Res Ctr, Seika 6190237, Japan Sumitomo Elect Ind Ltd, Semicond Div, Itami, Hyogo 6640016, Japan SumitomoElect Ind Ltd Itami Hyogo Japan 6640016 mi, Hyogo 6640016, Japan
Titolo Testata:
MATERIALS TRANSACTIONS
fascicolo: 3, volume: 42, anno: 2001,
pagine: 397 - 398
SICI:
1345-9678(200103)42:3<397:CASIAO>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONIC-STRUCTURE CALCULATIONS; MOLECULAR-BEAM EPITAXY; PSEUDOPOTENTIALS; SUBSTRATE; HYDROGEN;
Keywords:
gallium arsenide; impurity atom; thermal etching; ab initio electronic-structure calculation; pseudopotential;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
Citazioni:
17
Recensione:
Indirizzi per estratti:
Indirizzo: Sawamura, A Sumitomo Elect Ind Ltd, CAE Res Ctr, Seika 6190237, Japan Sumitomo Elect Ind Ltd Seika Japan 6190237 ka 6190237, Japan
Citazione:
A. Sawamura et al., "C and Si impurity atoms on a GaAs(001) surface", MATER TRANS, 42(3), 2001, pp. 397-398

Abstract

AB initio pseudopotential calculations of C and Si impurity atoms on on As-terminated GaAs(001) surface have been performed. First, the C atom is round to stay near a midpoint between the As atoms on the surface and the Si atom a cation site. Secondly, we find that the C atom is more strongly boundto the GaAs surface than the Si atom. Geometrically as well as energetically, the C atom is more difficult to remove from the GaAs surface. The present results agree with an experimental fact that in contrast with the case of Si, eliminating the C impurity through the surface requires thermal etching at such a high temperature of 750 degreesC.

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Documento generato il 20/09/20 alle ore 07:44:48