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Titolo:
Investigation of MBE grows GaAs/AlGaAs/InGaAs heterostructures
Autore:
Melkadze, R; Khuchua, N; Tchakhnakia, Z; Makalatia, T; Didebashvili, GD; Peradze, G; Khelashvili, T; Ksaverieva, M;
Indirizzi:
Tbilisi State Univ, RPC Electron Technol, GE-380079 Tbilisi, Rep of Georgia Tbilisi State Univ Tbilisi Rep of Georgia GE-380079 lisi, Rep of Georgia
Titolo Testata:
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
fascicolo: 1-3, volume: 80, anno: 2001,
pagine: 262 - 265
SICI:
0921-5107(20010322)80:1-3<262:IOMGGH>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Keywords:
molecular beam epitaxy; field-effect transistor; pseudomorphic heterostructure;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Melkadze, R Tbilisi State Univ, RPC Electron Technol, Chavchavadze Ave 13,GE-380079 Tbilisi, Rep of Georgia Tbilisi State Univ Chavchavadze Ave 13 Tbilisi Rep of Georgia GE-380079
Citazione:
R. Melkadze et al., "Investigation of MBE grows GaAs/AlGaAs/InGaAs heterostructures", MAT SCI E B, 80(1-3), 2001, pp. 262-265

Abstract

This paper reports on the influence of the In mole fraction variation (0.1less than or equal to x less than or equal to 0.25) of MBE grown pseudomorphic GaAs/Al-y GB(1 - y)As/InxGa1 - xAs heterostructures on the GaAs/Al-y GB(1 - y)As/InxGa1 - xAs heterostructures on the material quality and the performance of the fabricated devices. For x = 0.1-0.15, tile carrier mobility in the samples was 4500 cm(2) V-1 s (at 300 K) and 37 000 cm(2)V(-1) s (at 77 K) and decreased significantly at low temperatures as s was increasingup to 0.25. Transistors with gate length of 0.8 m anti In0.1Ga0.9As channels exhibited transconductances of 200-220 mSm mm(-1) and output conductances of 0.15-0.20 mSm mm(-1), while gate-source breakdown voltages were 27-28 V. Delay times of the designed and fabricated ICs frequency dividers by 2 were 130-140 ps. (C) 2001 Elsevier Science B.V. AII rights reserved.

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Documento generato il 14/08/20 alle ore 08:15:01