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Titolo:
Electrical characteristics of p-n junction diodes fabricated by Si epitaxyat low temperature using sputtering-type electron cyclotron resonance plasma
Autore:
Wang, JL; Nakashima, H; Gao, JS; Iwanaga, K; Furukawa, K; Muraoka, K; Sung, Y;
Indirizzi:
Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka 8168580,Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 i, Kasuga, Fukuoka 8168580,Japan Kyushu Univ, Adv Sci & Technol Ctr Cooperat Res, Kasuga, Fukuoka 8168580, Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 , Kasuga, Fukuoka 8168580, Japan Miyazaki Univ, Dept Elect & Elect Engn, Mirazaki 8892192, Japan Miyazaki Univ Mirazaki Japan 8892192 Elect Engn, Mirazaki 8892192, Japan
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
fascicolo: 2, volume: 19, anno: 2001,
pagine: 333 - 336
SICI:
1071-1023(200103/04)19:2<333:ECOPJD>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON FILMS; GROWTH; BIAS; DEPOSITION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
11
Recensione:
Indirizzi per estratti:
Indirizzo: Wang, JL Kyushu Univ, Interdisciplinary Grad Sch Engn Sci, Kasuga, Fukuoka8168580,Japan Kyushu Univ Kasuga Fukuoka Japan 8168580 , Fukuoka 8168580,Japan
Citazione:
J.L. Wang et al., "Electrical characteristics of p-n junction diodes fabricated by Si epitaxyat low temperature using sputtering-type electron cyclotron resonance plasma", J VAC SCI B, 19(2), 2001, pp. 333-336

Abstract

This article reports the electrical characteristics of p-n junction diodesthat were formed by directly depositing a Sb-doped n-type epilayer on a p-type substrate by using a de-bias electron cyclotron resonance plasma sputtering system at a low temperature of 400 degreesC and a conventional vacuumof 5 X 10(-7) Torr. The reverse current density of the n(+) -p junctions diodes depends on deposition gas pressures and substrate biases. The n(+)-p junction diodes exhibit, under optimum conditions, a reverse current density as low as 9.5X 10(-9) A/cm(2) at a reverse bias voltage of 5 V and an ideality factor of 1.05. The excellent characteristics of the n+-p junction diode are due to the integrity of interface between ni epilayer and p-type Sisubstrate. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 20/01/21 alle ore 03:01:17