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Titolo:
Thermoelectric properties of Rh-doped Ru2Si3 prepared by floating zone melting method
Autore:
Arita, Y; Mitsuda, S; Nishi, Y; Matsui, T; Nagasaki, T;
Indirizzi:
Nagoya Univ, Grad Sch Engn, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan Nagoya Univ Nagoya Aichi Japan 4648603 a Ku, Nagoya, Aichi 4648603, Japan
Titolo Testata:
JOURNAL OF NUCLEAR MATERIALS
fascicolo: 1-2, volume: 294, anno: 2001,
pagine: 202 - 205
SICI:
0022-3115(200104)294:1-2<202:TPORRP>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Arita, Y Nagoya Univ, Grad Sch Engn, Dept Quantum Engn, Chikusa Ku, Furo Cho, Nagoya, Aichi 4648603, Japan Nagoya Univ Furo Cho Nagoya Aichi Japan 4648603 hi 4648603, Japan
Citazione:
Y. Arita et al., "Thermoelectric properties of Rh-doped Ru2Si3 prepared by floating zone melting method", J NUCL MAT, 294(1-2), 2001, pp. 202-205

Abstract

Precipitation-free samples of Rh-doped Ru2Si3 were prepared by the floating zone (FZ) method. The temperature dependences of the electrical resistivities and the Seebeck coefficients of Rh-doped Ru2Si3 (Rh content = 0, 4, 6 mol%) were measured. The electrical resistivities of both 4% and 6% Rh-doped Ru2Si3 were smaller than those of undoped Ru2Si3 prepared by the FZ method and 4% Rh-doped one prepared by other methods. The maximum value of the Seebeck coefficients for all samples was -175 muV/K at 673 K for 4% Rh-dopedRu2Si3. The dimensionless thermoelectric figure of merit reached 0.8 for 4% Rh-doped Ru2Si3 at 1073 K, which was about 50% larger than that of optimized n-type SiGe. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 04/04/20 alle ore 12:08:08