Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Photoelectric properties of PbSe/BaF2/CaF2 films on Si(111)
Autore:
Jin, JS; Wu, HZ; Chang, Y; Shou, X; Fang, XM; McCann, PJ;
Indirizzi:
Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA Univ Oklahoma Norman OK USA 73019 Elect & Comp Engn, Norman, OK 73019 USA
Titolo Testata:
JOURNAL OF INFRARED AND MILLIMETER WAVES
fascicolo: 2, volume: 20, anno: 2001,
pagine: 154 - 156
SICI:
1001-9014(200104)20:2<154:PPOPFO>2.0.ZU;2-T
Fonte:
ISI
Lingua:
CHI
Soggetto:
GROWTH; PBSE;
Keywords:
PbSe films; BaF2/CaF2 buffer; Schottky diode; current-voltage characteristics;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Jin, JS Univ Oklahoma, Sch Elect & Comp Engn, Norman, OK 73019 USA Univ Oklahoma Norman OK USA 73019 Comp Engn, Norman, OK 73019 USA
Citazione:
J.S. Jin et al., "Photoelectric properties of PbSe/BaF2/CaF2 films on Si(111)", J INF M W, 20(2), 2001, pp. 154-156

Abstract

PbSe films were grown on Si(111) by incorporation of BaF2/CaF2 buffers using molecular beam epitaxy. The measurements of both scanning electronic microscopy and high-resolution X-ray diffraction showed high crystalline quality of the PbSe films. The surface of PbSe was mirror-like and no cracks were observed. The full width at half-maximum of PbSe diffraction peak was only 153 arcsec. The epitaxial PbSe films were used to fabricate photodiodes. For the first time, metallic aluminum was used to form Al-PbSe Schottky diodes, which demonstrated better and more stable current-voltage characteristics than that obtained from Pb-PbSe Schottky diodes.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 07/04/20 alle ore 22:05:28