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Titolo:
Fabrication of c-axis oriented YBaCuO trilayer junctions with Ar plasma treatment
Autore:
Sato, H; Kaneko, A; Kaneda, T; Yamada, T; Yamamoto, H; Hohkawa, K; Akoh, H;
Indirizzi:
Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan Natl Inst Adv Interdisciplinary Res, Tsukuba, Ibaraki 3058562, Japan Natl Inst Adv Interdisciplinary Res Tsukuba Ibaraki Japan 3058562 , Japan Nihon Univ, Funabashi, Chiba 2748501, Japan Nihon Univ Funabashi Chiba Japan 2748501 Funabashi, Chiba 2748501, Japan Kanagawa Inst Tech, Atsugi, Kanagawa 2430203, Japan Kanagawa Inst Tech Atsugi Kanagawa Japan 2430203 Kanagawa 2430203, Japan
Titolo Testata:
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
fascicolo: 1, volume: 11, anno: 2001,
parte:, 1
pagine: 509 - 512
SICI:
1051-8223(200103)11:1<509:FOCOYT>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
JOSEPHSON-JUNCTIONS; IMPROVEMENT; FILMS;
Keywords:
Ar plasma treatment; c-axis orientation; Josephson junctions; YBaCuO trilayer junctions;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Sato, H Electrotech Lab, 1-1-4 Umezono, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab 1-1-4 Umezono Tsukuba Ibaraki Japan 3058568 Japan
Citazione:
H. Sato et al., "Fabrication of c-axis oriented YBaCuO trilayer junctions with Ar plasma treatment", IEEE APPL S, 11(1), 2001, pp. 509-512

Abstract

We have fabricated c-axis oriented YBaCuO/PrBaCuO/YBaCuO trilayer junctions on a LSAT single crystal substrate. Since the c-axis oriented junctions had a smaller critical current density J(c) compare to (103) oriented YBaCuOtrilayer junctions, an Ar plasma treatment was carried out. After base electrode deposition, the film sample was bombarded by Ar plasma generated by a RF signal applying the substrate holder. During the process, only Ar gas was supplied, and a substrate temperature was kept at deposition temperature. A typical junction without Ar plasma treatment had a J(c) of 180 A/cm(2). The junction with Ar plasma treatment, on the other hand, showed J(c) of 1.6 kA/cm(2) suggesting that the Ar plasma treatment can be used to improvethe junction properties.

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Documento generato il 19/09/20 alle ore 18:22:32