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Titolo:
Nb-based SIS mixer in the 800 GHz band
Autore:
Noguchi, T; Maezawa, H; Shi, SC; Yamamoto, S;
Indirizzi:
Nobeyama Radio Observ, Minamisa Ku, Nagano 3841305, Japan Nobeyama Radio Observ Nagano Japan 3841305 isa Ku, Nagano 3841305, Japan Univ Tokyo, Dept Phys, Tokyo 1130033, Japan Univ Tokyo Tokyo Japan 1130033 iv Tokyo, Dept Phys, Tokyo 1130033, Japan Purple Mtn Observ, Nanjing 20008, Peoples R China Purple Mtn Observ Nanjing Peoples R China 20008 g 20008, Peoples R China
Titolo Testata:
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
fascicolo: 1, volume: 11, anno: 2001,
parte:, 1
pagine: 167 - 170
SICI:
1051-8223(200103)11:1<167:NSMIT8>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Keywords:
gap energy; niobium; SIS mixer; submillimeter waves;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
10
Recensione:
Indirizzi per estratti:
Indirizzo: Noguchi, T Nobeyama Radio Observ, Minamisa Ku, Nagano 3841305, Japan Nobeyama Radio Observ Nagano Japan 3841305 ano 3841305, Japan
Citazione:
T. Noguchi et al., "Nb-based SIS mixer in the 800 GHz band", IEEE APPL S, 11(1), 2001, pp. 167-170

Abstract

We have built a waveguide SIS mixer with Nb-based parallel-connected twin junctions at 800 GHz which is above the gap frequency of Nb (690 GHz). Heterodyne mixing was performed at 810 GHz and a receiver noise temperature of 580 K (DSB), which includes noise contributions due to a vacuum window and a beam splitter, was achieved using Nb/AlOx/Nb junctions with Nb striplines, The performance of this mixer is quite good and it is shown that efficient mixing in Nb-based SIS junctions is still possible above the gap frequency, SIS mixers with Al striplines have also been fabricated and good DC I-V characteristics have been observed. Heterodyne measurements of these mixersare now under preparation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 01:20:27