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Titolo:
Anomalous features in surface impedance of Y-Ba-Cu-O thin films: Dependence on frequency, RF and DC fields
Autore:
Velichko, AV; Porch, A; Lancaster, MJ; Humphreys, RG;
Indirizzi:
Univ Birmingham, Sch Elect & Elect Engn, Birmingham B15 2TT, W Midlands, England Univ Birmingham Birmingham W Midlands England B15 2TT W Midlands, England DERA, Malvern WR14 3PS, Worcs, England DERA Malvern Worcs England WR14 3PS ERA, Malvern WR14 3PS, Worcs, England
Titolo Testata:
IEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITY
fascicolo: 1, volume: 11, anno: 2001,
parte:, 3
pagine: 3497 - 3500
SICI:
1051-8223(200103)11:1<3497:AFISIO>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
MAGNETIC-FIELD; SUPERCONDUCTIVITY; RECOVERY;
Keywords:
YBaCuO thin films; nonlinear microwave surface impedance; anomalous effects; power-handling capability;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Velichko, AV Univ Birmingham, Sch Elect & Elect Engn, Birmingham B15 2TT, W Midlands, England Univ Birmingham Birmingham W Midlands England B15 2TT ngland
Citazione:
A.V. Velichko et al., "Anomalous features in surface impedance of Y-Ba-Cu-O thin films: Dependence on frequency, RF and DC fields", IEEE APPL S, 11(1), 2001, pp. 3497-3500

Abstract

Two high-quality Y-Ba-Cu-O thin films on MgO substrates have been investigated using the coplanar resonator technique at 8 and 16 GHz. Both films exhibit In anomalous decrease in their surface impedance Z(s) as a function ofmicrowave field H-rf. In zero de field, H-rf-dependences of R-s and X, forboth the samples are uncorrelated, and only one of the quantities, R, or X, displays anomalous behavior. Here, application of relatively weak (similar to5 mT) de magnetic fields H-dc can produce a correlated decrease of R-x(H-rf) and X-s(H-rf). The dependences of Z(s) on H-dc in both low and high microwave power regimes were found to be non;monotonic. The frequency dependence of R-s similar to f(n), 1.7 <n <2.5, remained the same upon the transition from low to high microwave power ranges. The consequences of the reported findings for microwave device applications are briefly discussed.

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Documento generato il 28/03/20 alle ore 23:29:49