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Titolo:
On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy
Autore:
Fissel, A; Richter, W; Furthmuller, J; Bechstedt, F;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany Univ Jena, Inst Festkorpertheorie & Theoret Opt, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 orie & Theoret Opt, D-07743 Jena, Germany
Titolo Testata:
APPLIED PHYSICS LETTERS
fascicolo: 17, volume: 78, anno: 2001,
pagine: 2512 - 2514
SICI:
0003-6951(20010423)78:17<2512:OTNOTD>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; SILICON-CARBIDE; VACANCIES; DEFECTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Fissel, A Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 7743 Jena, Germany
Citazione:
A. Fissel et al., "On the nature of the D-1-defect center in SiC: A photoluminescence study of layers grown by solid-source molecular-beam epitaxy", APPL PHYS L, 78(17), 2001, pp. 2512-2514

Abstract

Undoped and boron-doped SiC layers are grown on hexagonal SiC(0001) substrates by means of solid-source molecular-beam epitaxy. Hexagonal 4H- and 6H-SiC layers are grown homoepitaxially via step-controlled epitaxy, whereas the cubic 3C-SiC is grown pseudomorphically via nucleation and subsequent step flow. The low-temperature photoluminescence spectra only show the well-known emission lines of the so-called D-1 center. The line positions are compared with results of first-principles calculations. The growth conditions,the line shape, and the line shift with the polytype support an interpretation as bound-exciton recombination at a native-defect complex that contains a Si vacancy. (C) 2001 American Institute of Physics.

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Documento generato il 17/01/21 alle ore 18:28:14