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Titolo:
Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD
Autore:
Kim, HM; Kang, TW;
Indirizzi:
Dongguk Univ, Quantum Funct Semicond Res Ctr, Chung Gu, Seoul 100715, South Korea Dongguk Univ Seoul South Korea 100715 hung Gu, Seoul 100715, South Korea
Titolo Testata:
MATERIALS LETTERS
fascicolo: 5, volume: 48, anno: 2001,
pagine: 263 - 268
SICI:
0167-577X(200104)48:5<263:CCOIQW>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCANNING OPTICAL MICROSCOPY; LASER-DIODES; LOCALIZED EXCITONS; GAN; PHOTOLUMINESCENCE; HETEROSTRUCTURES; SINGLE;
Keywords:
InGaN; cathodoluminescence; quantum well; MOCVD; in composition; phase separation; nonradiative recombination center;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, HM Dongguk Univ, Quantum Funct Semicond Res Ctr, Chung Gu, 3-26 Pil Dong, Seoul 100715, South Korea Dongguk Univ 3-26 Pil Dong Seoul South Korea 100715 , South Korea
Citazione:
H.M. Kim e T.W. Kang, "Cathodoluminescence characteristics of InGaN/GaN quantum wells grown by MOCVD", MATER LETT, 48(5), 2001, pp. 263-268

Abstract

Phase separation and In segregation in InGaN/GaN quantum wells (QWs) grownby metalorganic chemical vapor deposition (MOCVD) were studied by cathodoluminescence (CL) imaging and spectroscopy. The spatial homogeneity of optical properties in InGan/GaN QW was studied. It is found that the CL images taken at different wavelengths show very little difference for the In-low QW, while some parts are complementary for the In-low QW. This result strongly suggests that the additional intensity fluctuation which appears with increasing indium composition is due to phase separation in the InGaN layers. Especially, In0.16Ga0.84N quantum wells with In compositional non-uniformity and a small number of structural defects originating at the InGaN/GaN interface showed sharp and intense InGaN emission in CL spectroscopy. Increasing the In composition caused surface roughness in the InGaN layer and the formation of stacking faults/dislocations originating at InGaN/GaN interface. This resulted in a reduction of the InGaN emission peak intensity. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 04/04/20 alle ore 02:07:08