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Titolo:
Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method
Autore:
Mano, T; Tsukamoto, S; Koguchi, N; Fujioka, H; Oshima, M; Lee, CD; Leem, JY; Lee, HJ; Noh, SK;
Indirizzi:
Natl Res Inst Met, Tsukuba, Ibaraki 3050047, Japan Natl Res Inst Met Tsukuba Ibaraki Japan 3050047 a, Ibaraki 3050047, Japan Univ Tokyo, Grad Sch Engn, Dept Appl Chem, Tokyo 1138656, Japan Univ Tokyo Tokyo Japan 1138656 ngn, Dept Appl Chem, Tokyo 1138656, Japan Korea Res Inst Stands & Sci, Mat Evaluat Ctr, Taejon 305600, South Korea Korea Res Inst Stands & Sci Taejon South Korea 305600 05600, South Korea
Titolo Testata:
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
fascicolo: 4, volume: 38, anno: 2001,
pagine: 401 - 404
SICI:
0374-4884(200104)38:4<401:TEMSOI>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; MBE GROWTH METHOD; OPTICAL-PROPERTIES; DROPLET EPITAXY; GAAS; SURFACE; GAAS(001); ISLANDS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
18
Recensione:
Indirizzi per estratti:
Indirizzo: Mano, T Natl Res Inst Met, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan Natl Res Inst Met 1-2-1 Sengen Tsukuba Ibaraki Japan 3050047 Japan
Citazione:
T. Mano et al., "Transmission electron microscope study of InGaAs quantum dots fabricated by SPEED method", J KOR PHYS, 38(4), 2001, pp. 401-404

Abstract

The structure of InGaAs: quantum dots (QDs) fabricated by; separated-phaseenhanced epitaxy with droplets (SPEED) method was investigated by means ofcross-sectional transmission electron microscopy. (TEM). No wetting layer was observed between tile QDs, which indicate that the SPEED method was notbased on the S-K mode. It was found that the lattice spacing of tile uncapped QDs was elongated in the vertical direction rather than in the lateral direction because the QDs were buried in the flat surface of tile specimen with their top surfaces exposed to the air. After tilt growth uf capping layer, the lattice spacing in the vertical direction shrank due to the compressive strain of a GaAs capping layer, resulting in the formation of highly strained QDs. This result is consistent with our previous speculation deduced from photoluminescence measurements.

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Documento generato il 09/04/20 alle ore 07:19:44