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Titolo:
Characterization of Cu doped CdSe thin films grown by vacuum evaporation
Autore:
Ramaiah, KS; Su, YK; Chang, SJ; Juang, FS; Ohdaira, K; Shiraki, Y; Liu, HP; Chen, IG; Bhatnagar, AK;
Indirizzi:
Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan Natl Cheng Kung Univ Tainan Taiwan 701 pt Elect Engn, Tainan 701, Taiwan Natl Huwei Inst Technol, Dept ElectroOpt Engn, Yunlin 63208, Taiwan Natl Huwei Inst Technol Yunlin Taiwan 63208 t Engn, Yunlin 63208, Taiwan Univ Tokyo, Adv Sci & Technol Res Ctr, Tokyo, Japan Univ Tokyo Tokyo Japan v Tokyo, Adv Sci & Technol Res Ctr, Tokyo, Japan Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 701, Taiwan Natl Cheng Kung Univ Tainan Taiwan 701 at Sci & Engn, Tainan 701, Taiwan Univ Hyderabad, Sch Phys, Hyderabad 500134, Andhra Pradesh, India Univ Hyderabad Hyderabad Andhra Pradesh India 500134 ndhra Pradesh, India
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 1-2, volume: 224, anno: 2001,
pagine: 74 - 82
SICI:
0022-0248(200104)224:1-2<74:COCDCT>2.0.ZU;2-N
Fonte:
ISI
Lingua:
ENG
Keywords:
characterization; X-ray diffraction; physical vapor deposition processes; cadmium compounds; semiconducting II-VI materials;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Su, YK Natl Cheng Kung Univ, Dept Elect Engn, 1 Univ Rd, Tainan 701, Taiwan Natl Cheng Kung Univ 1 Univ Rd Tainan Taiwan 701 ainan 701, Taiwan
Citazione:
K.S. Ramaiah et al., "Characterization of Cu doped CdSe thin films grown by vacuum evaporation", J CRYST GR, 224(1-2), 2001, pp. 74-82

Abstract

Cu doped CdSe thin films have been successfully grown by vacuum evaporation technique at various substrate temperatures. XRD analysis revealed that the films exhibited hexagonal structure with (0 0 2) as the preferred orientation. The grain size of the films was varied by changing the deposition temperatures. The variation of grain size led to a change in the band gap of the films nonlinearly from 2.05 to 2.22 eV. The photoluminescence (Pt) spectral variation with effect of grain size and temperature was studied. In the PL spectra, the near band edge emission at 1.725 eV and the bound excitonemission at 2.132 eV due to nanocrystallites were observed at low temperature. SEM analysis showed that the grain size of the films was found to be large when the films were deposited at a substrate temperature of 100 degreesC, whereas films deposited at different temperatures exhibited nano size crystallites. The quantum confinement effect was observed as a function of grain size in the films. X-ray photoelectron spectroscopy was used to determine the composition, chemical state of the elements and the possible existence of secondary phases in the films. (C) 2001 Published by Elsevier Science B.,V.

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Documento generato il 20/09/20 alle ore 10:41:16