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Titolo:
Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization
Autore:
Serrano, JJ; De Witte, H; Vandervorst, W; Guzman, B; Blanco, JM;
Indirizzi:
Univ Politecn Madrid, ETSIT, Dept Elect Technol, E-28040 Madrid, Spain Univ Politecn Madrid Madrid Spain E-28040 Technol, E-28040 Madrid, Spain IMEC, Interuniv Microelect Ctr, B-3001 Louvain, Belgium IMEC Louvain Belgium B-3001 univ Microelect Ctr, B-3001 Louvain, Belgium KU Leuven, INSYS, Louvain, Belgium KU Leuven Louvain BelgiumKU Leuven, INSYS, Louvain, Belgium
Titolo Testata:
JOURNAL OF APPLIED PHYSICS
fascicolo: 9, volume: 89, anno: 2001,
pagine: 5191 - 5198
SICI:
0021-8979(20010501)89:9<5191:SOTITO>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION; OXIDATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Serrano, JJ Univ Politecn Madrid, ETSIT, Dept Elect Technol, Ciudad Univ, E-28040 Madrid, Spain Univ Politecn Madrid Ciudad Univ Madrid Spain E-28040 , Spain
Citazione:
J.J. Serrano et al., "Simulation of the initial transient of the Si+ and O+ signals from oxygen sputtered silicon by means of independent models on sputtering and secondary ionization", J APPL PHYS, 89(9), 2001, pp. 5191-5198

Abstract

The Si+ and O+ signals, as obtained in secondary ion mass spectrometry (SIMS) analysis of silicon when using oxygen as the primary species, pass through an initial transient region before reaching the stationary state. We simulate this transient zone to check a phenomenological model for the secondary ionization of sputtered atoms. The simulation is split into two parts: the sputtering of neutrals obtained from implantation, sputtering, relocation/replacement, and diffusion, simulations and their subsequent ionization. The ionization phenomena are also described by some ad hoc fitting functions with which the SIMS measurements are better approached than with the model. The fitting functions and the model outputs are verified with experimental secondary ionization data. (C) 2001 American Institute of Physics.

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Documento generato il 19/09/20 alle ore 09:05:11