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Titolo:
A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy
Autore:
Wang, XD; Niu, ZC; Feng, SL; Miao, ZH;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
CHINESE PHYSICS LETTERS
fascicolo: 4, volume: 18, anno: 2001,
pagine: 608 - 610
SICI:
0256-307X(200104)18:4<608:ANPLO1>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
OPTICAL-PROPERTIES; ROOM-TEMPERATURE; CAP LAYER; DOTS; GAAS; LUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
15
Recensione:
Indirizzi per estratti:
Indirizzo: Niu, ZC Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 Peoples R China
Citazione:
X.D. Wang et al., "A narrow photoluminescence linewidth of 19.2 meV at 1.35 mu m from In0.5Ga0.5As/GaAs quantum island structure grown by molecular beam epitaxy", CHIN PHYS L, 18(4), 2001, pp. 608-610

Abstract

A self-organized In0.5Ga0.5As/GaAs quantum island structure emitting at 1.35 mum at room temperature has been successfully fabricated by molecular beam epitaxy via cycled (InAs)(1)/GaAs)(1)monolayer deposition method. The photoluminescence measurement shows that a very narrow linewidth of 19.2 meV at 300 K has been reached for the first time, indicating effective suppression of inhomogeneous broadening of optical emission from the In0.5Ga0.5As island structure due to indium segregation reduction by introducing an AlAs layer and the strain reduction by inserting an In0.2Ga0.8As layer overgrownon the top of islands. The mound-like morphology of the islands elongated along the [1 (1) over bar0] azimuth are observed by the atomic force microscopy measurement, which reveals the fact that strain in the islands is partially relaxed along the [1 (1) over bar0] direction. Our results present important information for the fabrication of 1.3 mum wavelength quantum dot devices.

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Documento generato il 02/04/20 alle ore 02:23:29