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Titolo:
Response to the comment on 'Modelling the optical constants of GaAs: excitonic effects at E1, E1+Delta(1) critical points'
Autore:
Djurisic, AB; Li, EH;
Indirizzi:
Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China Univ Hong Kong Hong Kong Hong Kong Peoples R China Kong, Peoples R China
Titolo Testata:
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
fascicolo: 4, volume: 16, anno: 2001,
pagine: 283 - 284
SICI:
0268-1242(200104)16:4<283:RTTCO'>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
MULTIPLE-QUANTUM WELLS; DIELECTRIC FUNCTION; TEMPERATURE-DEPENDENCE; PHOTOREFLECTANCE; ELLIPSOMETRY; GAAS/ALGAAS; ALXGA1-XAS;
Tipo documento:
Editorial Material
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
23
Recensione:
Indirizzi per estratti:
Indirizzo: Djurisic, AB Univ Hong Kong, Dept Elect & Elect Engn, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China Univ Hong Kong Pokfulam Rd Hong Kong Hong Kong Peoples R China
Citazione:
A.B. Djurisic e E.H. Li, "Response to the comment on 'Modelling the optical constants of GaAs: excitonic effects at E1, E1+Delta(1) critical points'", SEMIC SCI T, 16(4), 2001, pp. 283-284

Abstract

This response answers questions raised about inclusion of excitons in describing room temperature optical dielectric function of semiconductors. We also discuss the issue of lineshape broadening.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 08:32:56