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Titolo:
Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors
Autore:
Boschetti, C; Bandeira, IN; Closs, H; Ueta, AY; Rappl, PHO; Motisuke, P; Abramof, E;
Indirizzi:
Inst Nacl Pesquisas Espaciais, BR-12201970 Sao Jose Dos Campos, SP, BrazilInst Nacl Pesquisas Espaciais Sao Jose Dos Campos SP Brazil BR-12201970 BC Inst Tecnol Aeronaut, Dept Engn Eletr & Computacao, BR-12228900 Sao Jose Dos Campos, SP, Brazil Inst Tecnol Aeronaut Sao Jose Dos Campos SP Brazil BR-12228900 BC, Brazil
Titolo Testata:
INFRARED PHYSICS & TECHNOLOGY
fascicolo: 2, volume: 42, anno: 2001,
pagine: 91 - 99
SICI:
1350-4495(200104)42:2<91:MBEGOP>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; ARRAYS; TELLURIDE; SURFACES; SENSOR; SI;
Keywords:
IV-VI compounds; lead tin telluride; molecular beam epitaxy; IV-VI/Si heterostructures; IV-VI infrared detectors;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
20
Recensione:
Indirizzi per estratti:
Indirizzo: Boschetti, C Inst Nacl Pesquisas Espaciais, CP 515, BR-12201970 Sao Jose Dos Campos, SP, Brazil Inst Nacl Pesquisas Espaciais CP 515 Sao Jose Dos Campos SP Brazil BR-12201970 BC
Citazione:
C. Boschetti et al., "Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors", INFR PHYS T, 42(2), 2001, pp. 91-99

Abstract

We have investigated the molecular beam epitaxial (MBE) growth of the IV-VI compounds PbTe and PbSnTe directly on Si(1 0 0) substrates, by in situ reflection high energy electron diffraction characterization. PbTe/Si(1 0 0) heterostructures were previously obtained only by hot wall epitaxy, and were shown to work as room temperature heterojunction photovoltaic detectors for the mid-infrared band (3-5 mum). Present work has shown that IV-VI single crystal layers, crack-free and as thick as 0.5 mum, can be obtained by MBE on thermally deoxidized Si(1 0 0) substrates. The layers were found to berotated by 45 degrees relative to the substrate azimuthal orientation, andtheir quality depended on the use of an additional Te flux. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 23:56:08