Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer
Autore:
Pangal, K; Sturm, JC; Wagner, S;
Indirizzi:
Intel Corp, Flash Technol Dev & Mfg, Santa Clara, CA 95052 USA Intel CorpSanta Clara CA USA 95052 Dev & Mfg, Santa Clara, CA 95052 USA Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA Princeton Univ Princeton NJ USA 08544 Elect Engn, Princeton, NJ 08544 USA
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 4, volume: 48, anno: 2001,
pagine: 707 - 714
SICI:
0018-9383(200104)48:4<707:IAAPST>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; PLASMA-ENHANCED CRYSTALLIZATION; SELECTIVE CRYSTALLIZATION; GLASS; INTERFACE; EVOLUTION;
Keywords:
crystallization; hydrogen; hydrogen plasma; silicon; thin-film transistors (TFTs);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
25
Recensione:
Indirizzi per estratti:
Indirizzo: Pangal, K Intel Corp, Flash Technol Dev & Mfg, Santa Clara, CA 95052 USA Intel Corp Santa Clara CA USA 95052 , Santa Clara, CA 95052 USA
Citazione:
K. Pangal et al., "Integrated amorphous and polycrystalline silicon thin-film transistors in a single silicon layer", IEEE DEVICE, 48(4), 2001, pp. 707-714

Abstract

Using a masked hydrogen plasma treatment to spatially control the crystallization of amorphous silicon to polycrystalline silicon in desired areas, amorphous and polycrystalline silicon thin-him transistors (TFTs) with good performance have been integrated in a single film of silicon without laser processing. Both transistors are top gate and shared all process steps. Thepolycrystalline silicon transistors have an electron mobility in the linear regime of similar to 15 cm(2)/Vs, the amorphous silicon transistors have a linear mobility of similar to 0.7 cm(2)/Vs and both have an ON/OFF current ratios of > 10(5), Rehydrogenation of amorphous silicon after the 600 degreesC crystallization anneal using another hydrogen plasma is the critical process step for the amorphous silicon transistor performance. The rehydrogenation power, time, and reactor history are the crucial details that are discussed in this paper.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/11/20 alle ore 11:51:00