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Titolo:
HIGH-PERFORMANCE HGCDTE 2-COLOR INFRARED DETECTORS GROWN BY MOLECULAR-BEAM EPITAXY
Autore:
RAJAVEL RD; JAMBA DM; WU OK; JENSEN JE; WILSON JA; PATTEN EA; KOSAI K; GOETZ P; CHAPMAN GR; RADFORD WA;
Indirizzi:
HUGHES RES LABS,3011 MALIBY CYN RD MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of crystal growth
, volume: 175, anno: 1997,
parte:, 1
pagine: 653 - 658
SICI:
0022-0248(1997)175:<653:HH2IDG>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Keywords:
MBE; HGCDTE; IN SITU DOPED; SEQUENTIAL; 2-COLOR DETECTOR; MULTISPECTRAL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
14
Recensione:
Indirizzi per estratti:
Citazione:
R.D. Rajavel et al., "HIGH-PERFORMANCE HGCDTE 2-COLOR INFRARED DETECTORS GROWN BY MOLECULAR-BEAM EPITAXY", Journal of crystal growth, 175, 1997, pp. 653-658

Abstract

High-performance in situ doped two-color detectors with the n-p-n architecture for the sequential detection of mid- and long-wave infrared radiation were grown by molecular beam epitaxy. These detector structures were twin-free, and exhibited narrow rocking curves (approximate to 45 arcsec) as determined by X-ray measurements. The near surface etch pit densities in these device structures were typically (2-3) x 10(6) cm(-2). The structures were processed as mesas and their electrical properties measured. The spectral response of the mid-wave and long-wave diodes in the integrated detector were characterized by sharp turn-on and turn-off in both bands. Average R(0)A values of 100 Omega cm(2)at 10.5 mu m and 5.5 x 10(5) Omega cm(2) at 5.5 mu m were measured at77 K. These results are comparable to those of the best unispectral detectors and represents a significant milestone for MBE-grown HgCdTe two-color devices.

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Documento generato il 22/09/20 alle ore 02:23:11