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Titolo:
An analysis of the shape of a luminescence band induced by transitions of free electrons to carbon atoms in semi-insulating undoped GaAs crystals
Autore:
Glinchuk, KD; Litovchenko, NM; Prokhorovich, AV; Strilchuk, ON;
Indirizzi:
Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine Natl Acad Sci Ukraine Kiev Ukraine UA-03028 Phys, UA-03028 Kiev, Ukraine
Titolo Testata:
SEMICONDUCTORS
fascicolo: 4, volume: 35, anno: 2001,
pagine: 384 - 390
SICI:
1063-7826(2001)35:4<384:AAOTSO>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
GALLIUM-ARSENIDE; PHOTOLUMINESCENCE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
16
Recensione:
Indirizzi per estratti:
Indirizzo: Glinchuk, KD Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev, Ukraine Natl Acad Sci Ukraine Kiev Ukraine UA-03028 8 Kiev, Ukraine
Citazione:
K.D. Glinchuk et al., "An analysis of the shape of a luminescence band induced by transitions of free electrons to carbon atoms in semi-insulating undoped GaAs crystals", SEMICONDUCT, 35(4), 2001, pp. 384-390

Abstract

The shape of a photoluminescence band observed due to recombination of free electrons at shallow-level acceptors (carbon atoms) in semi-insulating undoped GaAs crystals was analyzed at various temperatures (T = 4.8-77 K). Itis shown that at low temperatures the shape observed essentially differs from the theoretical one, while at high temperatures theory and experiment agree closely for radiative transitions of free electrons to isolated shallow-level acceptors. The difference between the experimental and theoretical shapes of the photoluminescence band is associated with the broadening of carbon-induced acceptor levels (i.e., with the formation of the acceptor impurity band), resulting from the effect of electric fields of randomly distributed ionized acceptors and donors on "isolated" carbon atoms. Coincidenceof the shapes is associated with a considerable increase in the energy of free carriers (to values up to and above the width of the acceptor impurityband). (C) 2001 MAIK "Nauka /Interperiodica".

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Documento generato il 27/09/20 alle ore 06:22:36