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Titolo:
X-ray photoelectron diffraction on SiC and AlN epitaxial films: polytype structure and polarity
Autore:
Schroter, B; Winkelmann, A; Richter, W;
Indirizzi:
Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany Univ Jena Jena Germany D-07743 nst Festkorperphys, D-07743 Jena, Germany
Titolo Testata:
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
, volume: 114, anno: 2001,
pagine: 443 - 450
SICI:
0368-2048(200103)114:<443:XPDOSA>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; GROWTH; 6H-SIC(0001);
Keywords:
photoelectron diffraction; silicon carbide; nitrides; molecular beam epitaxy; single crystal surfaces; x-ray photoelectron spectroscopy;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
14
Recensione:
Indirizzi per estratti:
Indirizzo: Schroter, B Univ Jena, Inst Festkorperphys, Max Wien Pl 1, D-07743 Jena, Germany Univ Jena Max Wien Pl 1 Jena Germany D-07743 43 Jena, Germany
Citazione:
B. Schroter et al., "X-ray photoelectron diffraction on SiC and AlN epitaxial films: polytype structure and polarity", J ELEC SPEC, 114, 2001, pp. 443-450

Abstract

Angle-scanned X-ray photoelectron diffraction (XPD) is used to determine the polytype and polarity of thin SiC and ALN films grown by molecular beam epitaxy in {0001} orientation. For high-energy photoelectrons excited by Mgor Al K alpha radiation, the Si 2p and C Is diffraction patterns are different for the polytypes (2H, 3C, 4H, 6H) and their polar faces. A medium-energy XPD pattern is sensitive to the atomic stacking of more than ten monolayers and hardly affected by surface reconstruction or contamination. Thus, a clear fingerprint-like identification of the polytype and polarity is possible for a film thickness of only few nanometers. The diffraction patternsare well described by single-scattering cluster theory which allows the simulation of XPD patterns on any stacking sequences. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 17/01/21 alle ore 16:53:43