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Titolo:
Scanning tunneling spectroscopy analysis with a triangular inverse transfer matrix and its application to reduced SrTiO3 (110) surface
Autore:
Bando, H; Aiura, Y; Shimizu, T; Ochiai, Y; Haruyama, Y; Nishihara, Y;
Indirizzi:
Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech Lab Tsukuba Ibaraki Japan 3058568 uba, Ibaraki 3058568, Japan Kawasaki Steel Corp, Chuo Ku, Chiba 2600835, Japan Kawasaki Steel Corp Chiba Japan 2600835 p, Chuo Ku, Chiba 2600835, Japan Ibaraki Univ, Fac Sci, Mito, Ibaraki 3108512, Japan Ibaraki Univ Mito Ibaraki Japan 3108512 Sci, Mito, Ibaraki 3108512, Japan Himeji Inst Technol, Kamigori, Hyogo 6781297, Japan Himeji Inst Technol Kamigori Hyogo Japan 6781297 ri, Hyogo 6781297, Japan
Titolo Testata:
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA
, volume: 114, anno: 2001,
pagine: 313 - 317
SICI:
0368-2048(200103)114:<313:STSAWA>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONIC STATES; MICROSCOPY;
Keywords:
scanning tunneling spectroscopy; scanning tunneling microscopy; strontium titanate; titanate surface; surface electronic states;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Bando, H Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan Electrotech LabTsukuba Ibaraki Japan 3058568 aki 3058568, Japan
Citazione:
H. Bando et al., "Scanning tunneling spectroscopy analysis with a triangular inverse transfer matrix and its application to reduced SrTiO3 (110) surface", J ELEC SPEC, 114, 2001, pp. 313-317

Abstract

A straightforward method to deduce sample local density of states (LDOS) from the current-voltage characteristics (I-V) raw data in scanning tunneling spectroscopy (STS) is presented. The method is based on the relation between the I-V spectrum and the LDOS, both of which are treated as one-dimensional vectors: the I-V is generated from the LDOS by operating a triangular transfer matrix M. Then the LDOS is readily calculated from the I-V by operating the inverse matrix M-1, Which is also triangular. The method is an alternative for the conventional method to take (dl/dV)(VII), which often causes artificial peaks in LDOS at the onsets of I-V. Each row of M is determined by the tip density of states (DOS) and the barrier profile for the corresponding bias voltage. The tip DOS will be calculated from the I-V values measured at different tip-to-sample distances if the tip and sample have the same DOS and the barrier profile is symmetrical. As an example, the LDOS is calculated for the reduced SrTiO3 (110) on which the electronic states show metallic character depending on the annealing condition and sites. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 01/12/20 alle ore 07:46:44