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Titolo:
Performance of semi-insulating gallium arsenide X-ray pixel detectors withcurrent-integrating readout
Autore:
Sellin, PJ; Rossi, G; Renzi, MJ; Knights, AP; Eikenberry, EF; Tate, MW; Barna, SL; Wixted, RL; Gruner, SM;
Indirizzi:
Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England Univ Surrey Guildford Surrey England GU2 7XH ord GU2 7XH, Surrey, England Cornell Univ, LASSP, Ithaca, NY 14853 USA Cornell Univ Ithaca NY USA 14853 ornell Univ, LASSP, Ithaca, NY 14853 USA Univ Med & Dent New Jersey, Robert Wood Johnson Med Sch, Dept Pathol, Piscataway, NJ 08854 USA Univ Med & Dent New Jersey Piscataway NJ USA 08854 scataway, NJ 08854 USA Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5XH, Surrey, England Univ Surrey Guildford Surrey England GU2 5XH ord GU2 5XH, Surrey, England Princeton Univ, Dept Phys, Princeton, NJ 08544 USA Princeton Univ Princeton NJ USA 08544 Dept Phys, Princeton, NJ 08544 USA
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 1, volume: 460, anno: 2001,
pagine: 207 - 212
SICI:
0168-9002(20010311)460:1<207:POSGAX>2.0.ZU;2-U
Fonte:
ISI
Lingua:
ENG
Soggetto:
ARRAY DETECTOR; GAAS; DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
12
Recensione:
Indirizzi per estratti:
Indirizzo: Sellin, PJ Univ Surrey, Dept Phys, Guildford GU2 7XH, Surrey, England UnivSurrey Guildford Surrey England GU2 7XH , Surrey, England
Citazione:
P.J. Sellin et al., "Performance of semi-insulating gallium arsenide X-ray pixel detectors withcurrent-integrating readout", NUCL INST A, 460(1), 2001, pp. 207-212

Abstract

First images are presented from tests of a semi-insulating gallium arsenide X-ray imaging detector, flip-chip bonded to a current integrating CMOS readout chip. The detector is designed for applications in synchrotron X-ray imaging. The X-ray sensing part of the detector consists of a 150 mum thickGaAs photodiode containing an array of 92 x 100 pixels, each 150 mum by 150 mum in size. Operating the device at -20 degreesC we have obtained a map of detector dark current, which is typically in the range 0.4 pA to 0.8 pA/pixel. We have also obtained images of the detector response to a collimated X-ray beam. (C) 2001 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/12/20 alle ore 14:57:23