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Titolo:
Study of the characteristics of silicon MESA radiation detectors
Autore:
Chren, D; Juneau, M; Kohout, Z; Lebel, C; Leroy, C; Linhart, V; Pospisil, S; Roy, P; Saintonge, A; Sopko, B;
Indirizzi:
Univ Montreal, Montreal, PQ H3C 3J7, Canada Univ Montreal Montreal PQ Canada H3C 3J7 al, Montreal, PQ H3C 3J7, Canada Czech Tech Univ, CZ-11519 Prague, Czech Republic Czech Tech Univ Prague Czech Republic CZ-11519 19 Prague, Czech Republic
Titolo Testata:
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
fascicolo: 1, volume: 460, anno: 2001,
pagine: 146 - 158
SICI:
0168-9002(20010311)460:1<146:SOTCOS>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHARGE-TRANSPORT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Leroy, C Univ Montreal, Montreal, PQ H3C 3J7, Canada Univ Montreal Montreal PQ Canada H3C 3J7 eal, PQ H3C 3J7, Canada
Citazione:
D. Chren et al., "Study of the characteristics of silicon MESA radiation detectors", NUCL INST A, 460(1), 2001, pp. 146-158

Abstract

The MESA. process for building silicon diodes is described. I-V and C-V features of MESA detectors are given. Results of pulse-height spectra measurements with alpha particles incident on the front and back sides of a MESA diode establish the energy resolution of these detectors, show the evolutionof their response as a function of applied bias voltage, and bring information about the influence of MESA structure on charge collection. The characteristics of MESA detectors as a function of fluence are investigated in view of their possible use in high particle fluence environment. Charge collection data obtained from the measurements of the current-pulse response induced by beta and alpha particles are presented as a function of applied bias voltage and particle fluence. Some electrical characteristics of detectormaterial, namely the effective impurity or dopant concentrations (N-eff), the electron (mu (e)) and hole (mu (h)) mobilities, are studied as a function of fluence using a charge transport model. A comparison is made with thefeatures of standard planar (SP) silicon detectors. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 30/11/20 alle ore 16:46:18