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Titolo:
Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis
Autore:
Gillen, G; King, L; Freibaum, B; Lareau, R; Bennett, J; Chmara, F;
Indirizzi:
Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA Natl Inst Stand & Technol Gaithersburg MD USA 20899 ersburg, MD 20899 USA Fed Aviat Adm, Atlantic City, NJ 08405 USA Fed Aviat Adm Atlantic City NJUSA 08405 Adm, Atlantic City, NJ 08405 USA SEMATECH, Austin, TX 78741 USA SEMATECH Austin TX USA 78741SEMATECH, Austin, TX 78741 USA Peabody Sci, Peabody, MA 01960 USA Peabody Sci Peabody MA USA 01960Peabody Sci, Peabody, MA 01960 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 2, volume: 19, anno: 2001,
pagine: 568 - 575
SICI:
0734-2101(200103/04)19:2<568:NCSISF>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
SF5+; INSTRUMENT; EMISSION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
19
Recensione:
Indirizzi per estratti:
Indirizzo: Gillen, G Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA Natl Inst Stand & Technol Gaithersburg MD USA 20899 D 20899 USA
Citazione:
G. Gillen et al., "Negative cesium sputter ion source for generating cluster primary ion beams for secondary ion mass spectrometry analysis", J VAC SCI A, 19(2), 2001, pp. 568-575

Abstract

A cesium sputter ion source has been used to generate novel cluster and monoatomic primary ion beams for secondary ion mass spectrometry (SIMS). The source produces a variety of primary ion beam species with sufficient flux to be usable for both organic surface analysis and semiconductor depth profiling. The primary focus of this work is on the generation and use of carbon and carbon-containing cluster primary ion beams for SIMS. Stability of the sputter ion source is a few percent over 20 min, has useful lifetimes of weeks to months, and produces total primary ion beam currents for C-2(-) ions, measured at the sample, of >1 muA at an extraction voltage of 10 kV. Larger cluster ions (C(x)(-)x = 4 - 10 and CsC(x)(-)x = 2 - 8) are produced with tens of nA of beam current. Due to the divergence of the source, focused beam operation gives current densities under optimal conditions of 0.4-0.5 mA/cm(2). Cluster bombardment studies of organic films using carbon clusters C(x)(-)x = 1 - 10 indicate-that large enhancements (up to a factor of 800) in the secondary ion yield for characteristic molecular ions from organic samples can be obtained with the larger cluster ions. The signal enhancement can also be utilized in microfocus operation of the source for organicsecondary ion imaging studies. For favorable organic samples, cluster bombardment with C-x(-), x > 6 shows little evidence of degradation of the sample from the accumulation of primary beam-induced damage. This effect can bepotentially utilized for depth profiling of organic thin films and for further enhancements in sensitivity for organic SIMS analysis. Depth profilingof low energy As implants in silicon with the CsC6- primary ion demonstrates that as much as a factor of 6 improvement in apparent depth resolution can be obtained compared to profiles obtained under standard conditions using Cs+ bombardment. The flexibility of the source to produce monoatomic primary ion beams from virtually any target material is also being exploited toprepare low energy in situ ion implant standards for quantitative SIMS analysis. (C) 2001 American Vacuum Society.

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Documento generato il 21/01/21 alle ore 03:54:36