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Titolo:
Microcrystalline silicon by plasma enhanced chemical vapor deposition fromsilicon tetrafluoride
Autore:
Cicala, G; Capezzuto, P; Bruno, G;
Indirizzi:
Univ Bari, Dipartimento Chim, CNR, Ctr Studio Chim Plasmi, I-70126 Bari, Italy Univ Bari Bari Italy I-70126 Ctr Studio Chim Plasmi, I-70126 Bari, Italy
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 2, volume: 19, anno: 2001,
pagine: 515 - 523
SICI:
0734-2101(200103/04)19:2<515:MSBPEC>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; A-SI-H; POLYCRYSTALLINE SILICON; LOW-TEMPERATURE; GLOW-DISCHARGE; THIN-FILMS; MICROWAVE PLASMA; GROWTH; GAS; SIF4-H-2-HE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
49
Recensione:
Indirizzi per estratti:
Indirizzo: Cicala, G Univ Bari, Dipartimento Chim, CNR, Ctr Studio Chim Plasmi, Via Orabona, I-70126 Bari, Italy Univ Bari Via Orabona Bari Italy I-70126 a, I-70126 Bari, Italy
Citazione:
G. Cicala et al., "Microcrystalline silicon by plasma enhanced chemical vapor deposition fromsilicon tetrafluoride", J VAC SCI A, 19(2), 2001, pp. 515-523

Abstract

The amorphous and microcrystalline silicon growth from SiF4-H-2-He plasmashas been studied by exploring various parameters, such as He addition, rf power, H-2 dilution, and frequency. The dilution of SiF4-H-2 plasmas with He gas has been found to promote the crystalline phase and entirely microcrystalline silicon films have been obtained at low temperature (120 degreesC)under optimized experimental conditions. All the obtained results are discussed on the basis of etching/growth competition mechanism, in which the etching process by F atoms is selective for the amorphous phase. As such, allthe experimental conditions enhancing the etching channel let the microcrystalline growth prevail. The net deposition rate, monitored by the laser reflectance interferometry, results from the difference between growth rate, r(G), and etching rate, r(E). Optical emission spectroscopy is a powerful in situ diagnostic tool to monitor the crystallinity degree in the material,since the [F*]. [He*][SiF2*]. [H-alpha] ratio, obtained from the peak intensities and called the Gamma ratio, has been found to be proportional to the r(E)/r(G) ratio. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 13:24:12