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Titolo:
HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy
Autore:
Chou, SI; Baer, DS; Hanson, RK; Collison, WZ; Ni, TQ;
Indirizzi:
Stanford Univ, High Temp Gasdynam Lab, Dept Mech Engn, Stanford, CA 94305 USA Stanford Univ Stanford CA USA 94305 ept Mech Engn, Stanford, CA 94305 USA Lam Res Corp, Fremont, CA 94538 USA Lam Res Corp Fremont CA USA 94538Lam Res Corp, Fremont, CA 94538 USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 2, volume: 19, anno: 2001,
pagine: 477 - 484
SICI:
0734-2101(200103/04)19:2<477:HCATMI>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Soggetto:
WAVELENGTH MODULATION SPECTROSCOPY; RAY PHOTOELECTRON-SPECTROSCOPY; INDUCTIVELY-COUPLED DISCHARGES; CYCLOTRON-RESONANCE PLASMA; FREQUENCY-MODULATION; RADICAL MEASUREMENTS; IN-SITU; ELECTRON; SILICON; COLLISIONS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
34
Recensione:
Indirizzi per estratti:
Indirizzo: Chou, SI Lam Res Corp, Fremont, CA 94538 USA Lam Res Corp Fremont CA USA 94538 es Corp, Fremont, CA 94538 USA
Citazione:
S.I. Chou et al., "HBr concentration and temperature measurements in a plasma etch reactor using diode laser absorption spectroscopy", J VAC SCI A, 19(2), 2001, pp. 477-484

Abstract

In situ measurements of HBr concentrations and rotational temperatures were recorded in a 300 mm planar inductively coupled plasma (ICP) etch reactorusing diode laser wavelength modulation spectroscopy. A pair of diode lasers operating near 1.95 and 2.00 mum were wavelength tuned over the R(7) andP(2) transitions of HBr (2-0 band), time-division multiplexed, and directed through an industrial wafer etch reactor. The rotational temperature (typically 435+/-8 K) was determined from the ratio of peak absorption signals and the HBr concentration was determined from the measured temperature and absorbance from a single line. The measured rotational temperature in the plasma was relatively independent of conditions studied. The estimated HBr dissociation fraction ranged from 25%-60%, depending on the ICP power applied, gas flow rate. and chamber pressure. Decreases in HBr concentration weredetected 1 cm above the wafer surface during blank silicon wafer etching. The HBr dissociation fractions were measured before and after SF6 plasma clean with various focus rings made of quartz, alumina, and silicon carbide. The HBr dissociation fraction increased 17% with the quartz focus ring after the chamber was seasoned. The silicon carbide focus ring had essentially no influence on HBr concentration before and after chamber clean. The success of this work demonstrates the potential of diode lasers for in situ monitoring of the plasma etch process for real time control applications. (C) 2001 American Vacuum Society.

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Documento generato il 09/04/20 alle ore 13:16:29