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Titolo:
Frequency-dependent pulsed direct current magnetron sputtering of titaniumoxide films
Autore:
Kim, JY; Barnat, E; Rymaszewski, EJ; Lu, TM;
Indirizzi:
Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180USA Rensselaer Polytech Inst Troy NY USA 12180 & Elect Mfg, Troy, NY 12180USA
Titolo Testata:
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
fascicolo: 2, volume: 19, anno: 2001,
pagine: 429 - 434
SICI:
0734-2101(200103/04)19:2<429:FPDCMS>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; TIO2 FILMS; THIN-FILMS; COATINGS; DIELECTRICS; TEMPERATURE; EVAPORATION; PRESSURE; DIOXIDE; GROWTH;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
--discip_EC--
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Kim, JY Texas Instruments Inc, 13560 N Cent Expressway,MS3737, Dallas, TX 75243 USA Texas Instruments Inc 13560 N Cent Expressway,MS3737 Dallas TX USA 75243
Citazione:
J.Y. Kim et al., "Frequency-dependent pulsed direct current magnetron sputtering of titaniumoxide films", J VAC SCI A, 19(2), 2001, pp. 429-434

Abstract

Dramatic dependence of dielectric properties on the pulsing frequency was found for titanium oxide films deposited using the pulsed de magnetron sputtering technique at room temperature. The frequency range studied was between 50 and 250 kHz by varying the oxygen pressure. A minimum leakage currentdensity of 0.22 muA/cm(2) at 0.5 MV/cm electric-field strength for a film with dielectric constant of 26 was achieved for relative oxygen pressure P=60% [P(%)= P-O2/(P-O2 + P-Ar] and frequency f= 200 kHz. (C) 2001 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 10:09:40