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Titolo:
Accumulation and recovery of disorder on silicon and carbon sublattices inion-irradiated 6H-SiC
Autore:
Jiang, W; Weber, WJ; Thevuthasan, S; Shutthanandan, V;
Indirizzi:
Battelle Mem Inst, Pacific NW Natl Labs, Richland, WA 99352 USA Battelle Mem Inst Richland WA USA 99352 Natl Labs, Richland, WA 99352 USA
Titolo Testata:
JOURNAL OF NUCLEAR MATERIALS
fascicolo: 1-2, volume: 289, anno: 2001,
pagine: 96 - 101
SICI:
0022-3115(200102)289:1-2<96:AARODO>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
INDUCED AMORPHIZATION; CERAMICS; DAMAGE; CARBIDE; ENERGIES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
30
Recensione:
Indirizzi per estratti:
Indirizzo: Jiang, W Battelle Mem Inst, Pacific NW Natl Labs, POB 999,MS K8-93,902 Battelle Blvd, Richland, WA 99352 USA Battelle Mem Inst POB 999,MS K8-93,902 Battelle Blvd Richland WA USA 99352
Citazione:
W. Jiang et al., "Accumulation and recovery of disorder on silicon and carbon sublattices inion-irradiated 6H-SiC", J NUCL MAT, 289(1-2), 2001, pp. 96-101

Abstract

Irradiation experiments have been performed at 100, 170 and 300 K for 6H-SiC single crystals using Au2+ and He+ ions over a range of fluences. The evolution of disorder on both the Si and C sublattices has been simultaneously investigated using 0.94 MeV D+ Rutherford backscattering spectrometry (RBS) in combination with C-12(d,p) nuclear reaction analysis (NRA) in a (0 0 0 1) axial channeling geometry. At low doses, a higher rate of C disordering is observed, which is consistent with molecular dynamics simulations thatsuggest a smaller threshold displacement energy on the C sublattice. At higher doses for He+ irradiation, the C disordering appears to increase less rapidly than the Si disordering. Three distinct recovery stages are observed on both the Si and C sublattices in the Au2+-irradiated 6H-SiC. However, complete recovery of irradiation-induced disorder does not occur during isochronal annealing at temperatures up to 970 K. (C) 2001 Elsevier Science B.V. All rights reserved.

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Documento generato il 20/01/20 alle ore 10:30:58