Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands
Autore:
Wang, XD; Niu, ZC; Feng, SL; Miao, ZH;
Indirizzi:
Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China Chinese Acad Sci Beijing Peoples R China 100083 100083, Peoples R China
Titolo Testata:
JOURNAL OF CRYSTAL GROWTH
fascicolo: 3, volume: 223, anno: 2001,
pagine: 363 - 368
SICI:
0022-0248(200103)223:3<363:EOI(<X>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
TEMPERATURE-DEPENDENCE; M PHOTOLUMINESCENCE; INGAAS OVERGROWTH; GAAS; DOTS; EMISSION; ENERGY; LASER;
Keywords:
atomic force microscopy; low dimensional structures; optical microscopy; molecular beam epitaxy; nanomaterials; semiconducting III-V materials; laser diodes;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
--discip_EC--
Citazioni:
13
Recensione:
Indirizzi per estratti:
Indirizzo: Niu, ZC Chinese Acad Sci, Inst Semicond, Natl Lab Superlattices & Microstruct, POB912, Beijing 100083, Peoples R China Chinese Acad Sci POB 912 Beijing Peoples R China 100083 s R China
Citazione:
X.D. Wang et al., "Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands", J CRYST GR, 223(3), 2001, pp. 363-368

Abstract

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed viadepositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecularbeam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layershow PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become moretemperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show roomtemperature PL wavelength at about 1.3 mum. (C) 2001 Published by ElsevierScience B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/04/20 alle ore 19:23:29