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Titolo:
Finite element simulations of interdigital electrode structures on high permittivity thin films
Autore:
Prume, K; Hoffmann, S; Waser, R;
Indirizzi:
Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, Aachen, Germany Rhein Westfal TH Aachen Aachen Germany ffe Elektrotech, Aachen, Germany Forschungszentrum Julich, Inst Festkorperforsch, Julich, Germany Forschungszentrum Julich Julich Germany stkorperforsch, Julich, Germany
Titolo Testata:
INTEGRATED FERROELECTRICS
fascicolo: 1-4, volume: 32, anno: 2001,
pagine: 755 - 764
SICI:
1058-4587(2001)32:1-4<755:FESOIE>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
CAPACITORS;
Keywords:
interdigital electrode structures; high-k dielectric thin films; finite element simulation; thin film capacitance;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Physical, Chemical & Earth Sciences
Engineering, Computing & Technology
Citazioni:
6
Recensione:
Indirizzi per estratti:
Indirizzo: Prume, K Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech, IWE 2, Aachen, Germany Rhein Westfal TH Aachen IWE 2 Aachen Germany 2, Aachen, Germany
Citazione:
K. Prume et al., "Finite element simulations of interdigital electrode structures on high permittivity thin films", INTEGR FERR, 32(1-4), 2001, pp. 755-764

Abstract

A finite element model (FEM) was developed for the simulation of the dielectric properties of high permittivity dielectric thin films on insulating substrates contacted by interdigital electrode (IDE) structures. From the simulations of electrical potential and field distributions normalized capacitance values were extracted for various geometries and a wide range of filmpermittivities. The simulated data are compared with results obtained fromthe empirical formula of Farnell [1]. The FEM simulations were applied to experimental data of SrTiO3, BaTiO3 and Ba0.5Sr0.5TiO3 thin films on sapphire substrates contacted with different IDE structures.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 10:06:38